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Space Radiation Effects and Microelectromechanical Systems 95
10 5
10 4 Fe
dE/dx (MeV/(gm/cm 2 )) 10 3 2 O
10
Total energy loss H He
10 dE/dx
in silicon
1
10 −2 10 −1 1 10 10 2 10 3 10 4
Energy/Nucleon (MeV)
FIGURE 5.6 Energy lost per unit length in silicon as a function of the particle energy.
1.8
1.6
1.4 Bragg peak
LET (MeV-cm 2 /mg) 1.0
1.2
0.8
0.6
0.4
0.2
0.0
0 5 10 15
Depth (µm)
FIGURE 5.7 LET as a function of depth for a 2.5 MeV He ion passing through silicon. (From
E. Petersen, Single Event Upsets in Space: Basic Concepts, NSREC Short Course, IEEE, 1983.)
How MEMS respond to radiation is determined, in part, by where the charge
deposition occurs. For instance, ions passing through metal layers in MEMS
generate additional electrons, but because they constitute a tiny fraction of the
electrons already present in the metal, they have no effect on MEMS performance.
© 2006 by Taylor & Francis Group, LLC
