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                    Space Radiation Effects and Microelectromechanical Systems      107


                    Application of a voltage across the PZT causes it to flex and, in so doing, it deforms
                    the mirror membrane, which turns the DMD off. Exposure to an ionizing radiation
                    dose of 1 Mrad(Si) causes unbiased mirrors to deflect by about 5% and biased
                    mirrors to deflect by about 10%. The degradation is due to charge trapped in the
                    silicon nitrite on which the PZT is deposited and not to degradation of the PZT
                    itself.
                       The results of TID testing of DMDs show once again that the radiation
                    sensitivity of MEMS may be reduced by eliminating dielectric layers between
                    electrodes, because any charge generated in the dielectrics will modify the electric
                    field applied between the two electrodes, thereby causing an erroneous reading.

                    5.4 MITIGATION OF RADIATION EFFECTS IN MEMS

                    Reducing the sensitivity of MEMS to radiation effects is possible but may be quite
                    challenging given that MEMS are manufactured using normal silicon processing
                    steps, some of which are not necessarily compatible with radiation immunity. Most
                    commercial-off-the-shelf devices are well known for being radiation intolerant
                    because they do not use the special processing techniques required for obtaining
                    radiation hardened devices. For instance, hardening a device to TID requires the
                    avoidance of both high-temperature anneals and exposure to gases such as hydro-
                    gen. However, using an approach termed ‘‘hardening by design’’ makes it possible
                    to harden commercial processes to both TID and SEE. 18
                       One way to mitigate the effects of the trapped charge produced by the radiation
                    in MEMS is to modify the design to include a grounded conducting plane over the
                                                                                 13
                    insulator to shield the mechanical part from the effects of the trapped charge. This
                    approach proved effective for the accelerometer. Another approach is to place the
                    insulator in a position where charge trapped in it will have no effect on the device,
                    as in RF switches.
                       In summary, it should be possible to use special processing and design ap-
                    proaches to harden MEMS against radiation damage, but so far the only approach
                    that has been tried and proved to be effective is the avoidance of dielectric layers
                    between metal electrodes used for applying electric fields to the MEMS.

                    5.5 CONCLUSION

                    The performance of MEMS devices in space depends, critically, on the character-
                    istics of the radiation environment. The environment, in turn, depends on spacecraft
                    location and time. Characterizing the environment requires knowledge of such
                    factors as launch date, mission duration and orbit, as well as the amount of shielding
                    provided by the spacecraft. Fortunately, there are models for solar activity, cosmic
                    ray intensity, and fluxes in the radiation belts surrounding planets that simplify
                    calculations of total radiation exposure. By combining the calculated levels of
                    radiation exposure with the results of ground testing, it will be possible to assess
                    whether MEMS will meet mission requirements.





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