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                   106                       MEMS and Microstructures in Aerospace Applications


                                       Surface
                             Anchor               SiO 2  Bottom electrode
                             membrane  membrane   spacer              2.5 µm
                                                          (polysilicon)
                                                                          5 µm


                                            Substrate

                   FIGURE 5.16 Structure of membrane-based device manufactured by Boston Micromachines
                   Corporation. 17  (From S. McClure, Radiation Effects in MEMS: RF Relays, IEEE, 2003.)



                   figure also shows that there is no insulator between the two electrodes. The absence
                   of an insulator results in very little change in deflection depth following radiation
                   testing. Figure 5.17 shows that there is no change in the deflection depth as a
                   function of total dose up to 3 Mrad(Si). The results are independent of whether or
                   not the devices were irradiated under bias and confirm that the DMD device with no
                   insulating layer between the two electrodes is relatively immune to radiation
                   degradation.
                       The second device tested also consists of deformable mirrors and was manu-
                   factured by the Jet Propulsion Laboratory in conjunction with Pennsylvania State
                   University. It is not commercially available. A piezoelectric membrane, comprised
                   of a layer of lead zirconium titanate (PZT) deposited on silicon nitrite, is anchored
                   at two opposite edges to silicon posts. At the center and on top of the membrane is
                   an indium post that supports a thin silicon layer, which is the mirror membrane.


                               2.0


                                                   Average of 5 mirror segments
                             Deflection depth at 140 V (µm)  1.6
                               1.8




                               1.4


                               1.2


                               1.0
                                 0      500   1000    1500   2000    2500  3000
                                                Total dose [krad/(Si)]
                   FIGURE 5.17 Plot of deflection depth as a function of dose. 17  (From T.F. Miyahara, Total
                   Dose Degradation of MEMS Optical Mirrors, IEEE, 2003.)




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