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Osiander / MEMS and microstructures in Aerospace applications DK3181_c003 Final Proof page 59
MEMS Fabrication
Micromechanical device area
integration.
process
PE nitride PETEOS Metal 1 Nitride seal Field Oxide Sac oxide Poly MMPOLY1 Stud MMPOLY0 LS Nitride 1.9.2005 9:00pm 59
6 mm arsenic-doped epitaxial layer

P + MEMS-microelectronics

P + N-tub to
CMOS device area CMOS Poly2 N + CMOS Poly1 approach first

3.19
N + MEMS © 2006 by Taylor & Francis Group, LLC

Pad P-tub FIGURE