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58 Osiander / MEMS and microstructures in Aerospace applications DK3181_c003 Final Proof page 58 1.9.2005 9:00pm
MEMS and Microstructures in Aerospace Applications

KOH etch stop

p + HF release etch stop
Micromechanical device area Mechanical 2 µm arsenic-doped epitaxial layer
layer

Tungsten / TiN TiSi 2 / TiN N + antimony-doped substrate integration.

TiN Anchor Point p + process

MEMS-microelectronics

p +
N-tub to
CMOS device area Poly 2 p + approach

Si 3 N 4 passivation 2-ply poly-Si first

p + Microelectronics

P-tub 3.18 © 2006 by Taylor & Francis Group, LLC
Al bond pad TiN FIGURE