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                    MEMS Fabrication                                                 57


                       Of the three MEMS fabrication technologies previously discussed, surface
                    micromachining is the most amenable to integration with electronics to form an
                    integration of electonics and MEMS technology (IMEMS) process. There are
                    several challenges to the development of an IMEMS process:

                       .  Large vertical topologies: Microelectronic fabrication requires planar sub-
                         strates due to the use of precision photolithographic processes. Surface
                         micromachine topologies can exceed 10 mm due to the thickness of the
                         various layers.
                       . High-temperature anneals: The mitigation of the residual stress of the sur-
                         face micromachine structural layers can require extended period time at high
                         temperatures (such as several hours at 11008C for polysilicon). This would
                         have adverse effects due to the thermal budget of microelectronics that is
                         limited due to dopant diffusion and metallization.
                    There are three strategies for the development of an IMEMS process. 34


                       . Microelectronics first: This approach overcomes the planarity constraint
                         imposed by the photolithographic processes by building the microelectronics
                         before the nonplanar micromechanical devices. The need for extended
                         high temperature anneals is mitigated by the selection of MEMS materials
                                                       35
                         (e.g., aluminum, amorphous diamond ), and selection of the microelectronic
                         metallization (e.g., tungsten instead of aluminum), which make the MEMS
                         and microelectronic processing compatible. Examples of this IMEMS ap-
                         proach include an all-tungsten CMOS process that was developed by
                                                                        36
                         researchers at the Berkeley Sensor and Actuator Center  seen in Figure
                                                                              33
                         3.18. The TI DMD (Texas Instruments Incorporated, Dallas, TX)  uses the
                         microelectronics first approach and utilizes an aluminum structural layer
                         MEMS and photoresist sacrificial layer MEMS, which enables low-tempera-
                         ture processing.
                       . Interleave the microelectronics and MEMS fabrication: This approach
                         may be the most economical for large-scale manufacturing since it optimizes
                         and combines the manufacturing processes for MEMS and microelectronics.
                         However, this requires extensive changes to the overall manufacturing flow
                         in order to accommodate the changes in the microelectronic device or the
                         MEMS device. Analog devices has developed and marketed an accelerometer
                         and gyroscope that illustrates the viability and commercial potential of the
                         interleaving integration approach. 32
                       . MEMS fabrication first: This approach fabricates, anneals, and planarizes
                         the micromechanical device area before the microelectronic devices are
                         fabricated, which eliminates the topology and thermal processing constraints.
                         The MEMS devices are built in a trench, which is then refilled with oxide,
                         planarized, and sealed to form the starting wafer for the CMOS processing
                         as seen in Figure 3.19. This technology was targeted for inertial sensor






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