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1.9.2005 9:00pm
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MEMS and Microstructures in Aerospace Applications
58
KOH etch
HF release
stop
etch stop
p +
Micromechanical device area
2 µm arsenic-doped epitaxial layer
layer
Mechanical
N + antimony-doped substrate
Tungsten / TiN
TiSi 2 / TiN
TiN Anchor Point
p +
MEMS-microelectronics integration. process
p +
N-tub to
CMOS device area Poly 2 p + approach
Si 3 N 4 passivation 2-ply poly-Si first

p + Microelectronics

P-tub 3.18 © 2006 by Taylor & Francis Group, LLC
Al bond pad TiN FIGURE