Page 45 -
P. 45

2-26                                                             MEMS: Design and Fabrication


             Shibata, T., Kitamoto,Y., Unno, K., and Makino, E. (2000) “Micromachining of Diamond Film for MEMS
                  Applications,” J. MEMS 9, pp. 47–51.
             Shih, C.L., Lai, B.K., Kahn, H., Phillips, S.M., and  Heuer, A.H. (2001)  “A  Robust  Co-Sputtering
                  Fabrication Procedure for TiNi Shape Memory Alloys for MEMS,” J. MEMS 10, pp. 69–79.
             Smith, C.S. (1954) “Piezoresistive Effect in Germanium and Silicon,” Phys. Rev. 94, pp. 1–10.
             Walker, J.A., Gabriel, K.J., and Mehregany, M. (1991) “Mechanical Integrity of Polysilicon Films Exposed
                  to Hydrofluoric Acid Solutions,” J. Electron. Mater. 20, pp. 665–70.
             Wolfe, S., and Tauber, R. (1999) Silicon Processing for the VLSI Era, 2nd ed., Lattice Press, Sunset Beach,
                  CA.
             Wu, C.H., Zorman, C.A., and Mehregany, M. (1999) “Growth of Polycrystalline SIC Films on SiO and
                                                                                                       2
                  Si N by APCVD,” Thin Solid Films 355–56, pp. 179–83.
                    3  4
             Yang, Y., Wang, X., Ren, C., Xie, J., Lu, P., and Wang, W. (1999) “Diamond  Surface  Micromachining
                  Technology,” Diamond Relat. Mater. 8, pp. 1834–37.
             Yang, J., Kahn, H., He, A.-Q., Phillips, S.M., and Heuer, A.H. (2000) “A New Technique for Producing
                  Large-Area As-Deposited Zero-Stress LPCVD Polysilicon Films: The Multipoly Process,” J. MEMS
                  9, pp. 485–94.
             Yasseen, A., Cawley, J.D., and Mehregany, M. (1999) “Thick Glass Film Technology for Polysilicon Surface
                  Micromachining,” J. MEMS 8, pp. 172–79.
             Yasseen, A., Wu, C.H., Zorman, C.A., and Mehregany, M. (2000) “Fabrication and Testing of Surface
                  Micromachined Polycrystalline SiC Micromotors,” Electron. Device Lett. 21, pp. 164–66.
             Zhang, X., Zhang, T.Y., Wong, M., and Zohar, Y. (1998) “Rapid Thermal Annealing of Polysilicon Thin
                  Films,” J. MEMS 7, pp. 356–64.
             Zhang, X., Ghodssi, R., Chen, K.S., Ayon, A.A., and  Spearing, S.M. (2000)  “Residual  Stress
                  Characterization of Thick PECVD TEOS Film for Power MEMS Applications,” in Technical Digest:
                  Solid-State Sensor and Actuator Workshop, 4–8 June, Hilton Head, SC, pp. 316–19.
             Zorman, C.A., Roy, S., Wu, C.H., Fleischman, A.J., and  Mehregany, M. (1996) “Characterization  of
                  Polycrystalline Silicon Carbide Films Grown by Atmospheric Pressure Chemical Vapor Deposition
                  on Polycrystalline Silicon,” J. Mater. Res. 13, pp. 406–12.


             For Further Information

             A comprehensive review of polysilicon as a material for microelectronics and MEMS is presented in
             Polycrystalline Silicon for Integrated Circuits and Displays, 2nd ed., by Ted Kamins. The Materials Research
             Society holds an annual symposium on the materials science of MEMS at its fall meetings. The proceed-
             ings from these symposia have been published as volumes 546B, 605B and 657B of the Materials Research
             Society Symposium Proceedings. Several regularly published journals contain contributed and review
             papers  concerning  materials  aspects  of MEMS, including: (1)  the  Journal  of Microelectromechanical
             Systems, (2) Journal of Micromachining and Microengineering, (3) Sensors and Actuators, and (4) Sensors
             and Materials. These journals are carried by most engineering and science libraries and may be accessible
             online.
























             © 2006 by Taylor & Francis Group, LLC
   40   41   42   43   44   45   46   47   48   49   50