Page 271 - Mechanical design of microresonators _ modeling and applications
P. 271

0-07-145538-8_CH05_270_08/30/05



                                                 Resonant Micromechanical Systems

                              270   Chapter Five
                              compressed active layer



                                                    t1
                                 t2

                                               structural layer



                                         (a)                                     (b)
                              Figure 5.45 Bimorph with active piezoelectric layer in  compression:  (a) original
                              (undeformed) state; (b) deformed state.

                                Several MEMS/NEMS transducers are designed as bimorphs that
                              use piezoelectric or piezomagnetic materials. One component  of  the
                              bimorph is the substrate (or structural layer) whereas the piezo (active)
                              material is deposited over it. Variation of the electric/magnetic field
                              leads to compression/extension of the active layer, but due to bonding
                              to the substrate, the net  result is upward/downward  bowing  of  the
                              entire sandwich structure. Figure 5.45, for instance, shows a bimorph
                              which bends by prevented compression of an active piezoelectric layer.
                                An equivalent tip force F can be calculated which will produce the
                              same tip rotation as the bending moment M which is created by the
                              induced-strain  actuation. It can simply be  shown  that the force is
                              related to the moment in the form:

                                                             2M
                                                         F =                            (5.109)
                                                              l
                                                                                    7
                              where  l is the bimorph  length. Lobontiu  and Garcia  gave  the
                              relationship between the bending moment, the free induced strain İ ,
                                                                                             0
                              and the material/geometry properties of the bimorph,  and  therefore
                              Eq. (5.109) can be reformulated as
                                                             4
                                                        F =   f İ                       (5.110)
                                                             l  0
                                             E E A A (t + t )(E I  + E I )
                                                      2 1
                                                           2
                                                                      2 y2
                                                               1 y1
                                                   1
                                              1 2
                             where    f =
                                                                          2
                                           E A {4E I + E 4I  y2 + A (t + t ) }          (5.111)
                                                                        2
                                                                   2 1
                                            1
                                                   1 1
                                               2
                                                         2
                                           +4E A (E I + E I    + E I )
                                               2  2  1 y   2 y1   2 y2
                              For a piezoelectric material, the free strain is expressed in terms of the
                              active layer thickness and applied voltage as
                           Downloaded from Digital Engineering Library @ McGraw-Hill (www.digitalengineeringlibrary.com)
                                      Copyright © 2004 The McGraw-Hill Companies. All rights reserved.
                                        Any use is subject to the Terms of Use as given at the website.
   266   267   268   269   270   271   272   273   274   275   276