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212   5 Near Field

                                                                            80  50
                                         Reflectivity V 1 , V 2  (%)  80  V 1 2  80 50
                                          100
                                                                               10


                                                  V
                                                                               10

                                          60                            Duty (%)
                                             50 100 200 300 400 500 600 700 800 900 1000 2000 3000
                                                         Mark length (nm)
                            Fig. 5.59. Relationships between reflectivity V 1 (non-mark), V 2 (mark), and mark
                            length for super-RENS readout (P r = 4 mW), with optical pulse duty as parameter

                                          50
                                             Duty (%)  30   40
                                          40
                                                 20
                                         CNR (dB)  30  10  50
                                          20
                                          10                              80
                                           0
                                             50  100 200 300 400 500 600 700 800 900 1,000 2,000 3,000
                                                          Mark length (nm)
                            Fig. 5.60. Relationship between CNR and mark length for super-RENS readout
                            (P r = 4 mW), with optical pulse duty as parameter
                            mark length becomes shorter as the optical pulse duty ratio decreases, and
                            reaches 50 nm (CNR = 17 dB) at the duty ratio of 10%.
                               In summary, the scattered-type super-RENS usingZnSiO 2 /AgO /ZnSiO 2 /
                                                                                      x
                            GeSbTe/ZnSiO 2 has the followingcharacteristics:
                             1. The mask layer and the recordinglayer have five possible states depending
                               on the write power P w : as-depo, Agparticles uniformly dispersed and crys-
                               tallized (after initialization), Agcluster and half amorphous, Agdiffusion
                               and completely amorphous, and Agringand bubble pit.
                             2. The mask layer for the super-RENS readout has an Agringstructure,
                               and the aperture is filled with O 2 , which increases both the CNR and the
                               resolution limit.
                             3. The smallest mark length of 50 nm is reproduced at 17 dB by decreasing
                               the optical pulse duty ratio of 10% under the experimental condition of
                               λ/4NA = 413 nm.



                            Problems

                            5.1. How is the force F =2kT/d (due to Brownian motion) dependence on
                            the diameter d of a microsphere? The microsphere is suspended in water,
                            where k is the Boltzman constant, and T is 298 K.
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