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5.4 Future Applications  211
                                          (a)                  (b)

                                                           Initialization
                                      Mask
                                      (AgO )                                   Ag particle
                                         x
                                    Protective
                                   Recording       As-depo         Initialization (P  = 3.5 mW)
                                    (GeSbTe)                                 i
                                    (c)             (d)              (e)



                                               Ag cluster       Ag diffusion       Ag ring


                                         = 4.0-5.0 mW  P  = 5.5-7.5 mW   : greater than 8.0 mW
                                       P w              w              P w
                             Fig. 5.58. Proposed working mechanism of super-RENS using AgO mask layer
                                                                                    x

                            P r = 6 mW in the spectrum in the upper right figure and the signal amplitude
                            decreases due to the degradation of the resolution (Ag cluster size increases).

                            Scattered type super-RENS working mechanism
                            On the basis of these results, we propose a model for an Ag-super-RENS mech-
                            anism. Figure 5.58 shows the states just after writing (P r = 1 mW) for both
                            the mask layer and the recordinglayer, with write power P w as a parameter.
                            The workingmechanism for the Ag-super-RENS is as follows. Both the mask
                            and the recordinglayer have five possible states dependingon the write power
                            P w (a) as-depo, (b) Agparticles uniformly dispersed and crystallized (after
                            initialization P w =3.5 mW), (c) Agcluster and half amorphous (P w =4–
                            5 mW), (d) Agdiffusion and completely amorphous (P w =5.5–7.5 mW), and
                            (e) Agringand bubble pit (greater than P w = 8 mW). The mask layer for the
                            super-RENS readout (P r = 4 mW) has an Agringstructure, and the aperture
                            is filled with O 2 , which increases both the CNR and the resolution limit.
                            Optical pulse duty dependence

                            To realize a short mark length, we illuminated thermally isolated optical pulses
                            (havingdecreased duty ratio). Figure 5.59 shows the relationship between re-
                            flectivity V 1 (non-mark), V 2 (mark), and mark length for the write power of
                            P w =8.5 mW with the super-RENS readout (P r = 4 mW); the optical pulse
                            duty ratio as a parameter. The signal amplitude V pp = V 1 − V 2 increases as
                            the duty ratio decreases, which means the amorphous level difference between
                            mark and nonmark increases because the difference in temperature increases
                            due to the longer time separation between the laser pulses. Figure 5.60 shows
                            the relationship between CNR and mark length for the super-RENS readout,
                            optical pulse duty ratio as a parameter (P w =8.5 mW). The reproduced signal
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