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2.4 Applications  59
                               An LD monolithically integrated with a PD is mounted junction-up on a
                            slider. Light reflects from the medium back into the active region of the LD.
                            Head-medium spacing h (between the LD facet and the GeSbTe recording
                            medium) is approximately 2 µm: the sum of the slider flyingheight h 0 ,LD–
                            PD attachment error h 1 , and the protective layer thickness h 2 .


                            Head Structure
                            A monolithically integrated LD–PD chip with a wavelength of 1.3 µmwas
                            shown in Fig. 1.33. The LD is isolated from the PD by reactive ion beam
                            etching(RIBE). The space between LD and PD is about 5 µm and the monitor
                            current sensitivity is 0.1 mA/mW. The 1.2-µm-wide taper-ridged waveguide
                            on the top of the LD cavity was also fabricated by RIBE. FWHM of its near
                            field pattern are approximately 1 µm as shown in Fig. 2.34. This sharpened LD
                            is useful for the flyingoptical head because it does not require an additional
                            lens to converge the light beam, and hence does not lose power before reaching
                            the recordingmedium.
                               A long-wavelength (1.3 µm) InGaAsP LD (LD#1), reliable in air, can be
                            used in our flyinghead because its spot diameter is mainly constrained by the
                            shape of the ridged waveguide [2.25]. A short-wavelength (0.83 µm) GaAlAs
                            LD (LD#2) could be used if its facets were covered with dielectric protective
                            films to prevent oxidation in air.

                            Medium Structure

                            The optical disk is made up of multiple layers: SiN/GeSbTe/SiN/Au/SiN/glass
                            substrate as shown in Fig. 1.32. The first SiN layer operates as a protective
                            film for a head-medium reliability. The GeSbTe layer serves as the phase
                            change medium. The second SiN layer and the Au layer enhance the re-
                            flectivity change and the thermal diffusion speed of the recording medium.


                                                          (//)
                                                         0.85 mm










                                                                         (T)
                                                                    0.65 mm
                            Fig. 2.34. Near field pattern of the emitted light from a 1.2-µm wide taper-ridged
                            waveguide
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