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2.5 Designs for Related Problems of an ESEC LD  75
                            where
                                         [E 1 E 2 t 1 t 2 (α 1 − α 2 )(t 1 + t 2 )+ E 1 E 3 t 1 t 3 (α 1 − α 3 )(t 1 +2t 2 + t 3 )
                                         +E 1 E 4 t 1 t 4 (α 1 − α 4 )(t 1 +2t 2 +2t 3 + t 4 )
                              C =3∆Tl  2  +E 1 E 5 t 1 t 5 (α 1 − α 5 )(t 1 +2t 2 +2t 3 +2t 4 + t 5 )
                                         +E 2 E 3 t 2 t 3 (α 2 − α 3 )(t 2 + t 3 )
                                         +E 2 E 4 t 2 t 4 (α 2 − α 4 )(t 2 +2t 3 + t 4 )+ E 2 E 5 t 2 t 5 (α 2 − α 5 )
                                           ×(t 2 +2t 3 +2t 4 + t 5 )
                                         +E 3 E 4 t 3 t 4 (α 3 − α 4 )(t 3 + t 4 )+ E 3 E 5 t 3 t 5 (α 3 − α 5 )(t 3 +2t 4 + t 5 )
                                         +E 4 E 5 t 4 t 5 (α 4 − α 5 )(t 4 + t 5 )]
                                                       2
                                       [E 1 E 2 t 1 t 2 (t 1 + t 2 ) + E 1 E 3 t 1 t 3 (t 1 +2t 2 + t 3 ) 2
                                       +E 1 E 4 t 1 t 4 (t 1 +2t 2 +2t 3 + t 4 ) 2
                                                                       2
                                 D =3 +E 1 E 5 t 1 t 5 (t 1 +2t 2 +2t 3 +2t 4 + t 5 ) + E 2 E 3 t 2 t 3 (t 2 + t 3 ) 2
                                       +E 2 E 4 t 2 t 4 (t 2 +2t 3 + t 4 ) 2
                                                                  2
                                       +E 2 E 5 t 2 t 5 (t 2 +2t 3 +2t 4 + t 5 ) + E 3 E 4 t 3 t 4 (t 3 + t 4 ) 2
                                                             2
                                                                               2
                                       +E 3 E 5 t 3 t 5 (t 3 +2t 4 + t 5 ) + E 4 E 5 t 4 t 5 (t 4 + t 5 ) ]
                                       +(E 1 t 1 + E 2 t 2 + E 3 t 3 + E 4 t 4 + E 5 t 5 )
                                                           3
                                                     3
                                                                  3
                                                                        3
                                              3
                                         ×(E 1 t + E 2 t + E 3 t + E 4 t + E 5 t )
                                                                        5
                                                                  4
                                                           3
                                              1
                                                     2
                               Figure 2.55 shows the deflection of a bimorph MC with the antireflection
                                          (2)
                            coating, and Au  as a parameter. Deflection greater than λ/2 is possible
                            when Au (2)  is thicker than 78 nm for InP (λ =1.3 µm), and thicker than 81
                            nm for GaAs (λ =0.83 µm) LDs. As a result, the final five-layer MC design
                            with antireflection and bimorph structures is shown in Table 2.2.
                               We derived an analytical model for a five-layer semiconductor MC to pre-
                            dict beam deflection that occurs due to temperature changes caused by a laser
                            light. We confirmed that the tip deflection of a bimorph MC (0.1-µm gold layer
                            and a 0.1-µmSi 3 N 4 dielectric layer) with an antireflection coatingis enhanced
                            by more than a half-wavelength to widen the tunable LD wavelength variation.
                                             1000
                                                  Au (1)  / Si N  (1)  /
                                                       3  4
                                                  Au (2)  / Si N 4 (2)  /InP
                                                       3
                                              800
                                            Deflection (nm)  600  415 (GaAs)  (1)   (1)
                                                 650 (InP)
                                                                Au
                                              400
                                                                     3
                                                                   / Si N
                                                                Au (2)  / Si N 4 4 (2)  / /GaAs
                                                                     3
                                              200
                                                          78 81
                                               0
                                                 0      50     100    150    200
                                                       Thickness of Au (2)  film (nm)
                            Fig. 2.55. Deflection of bimorph MCs with antireflection coating, Au (2)  thickness
                            as a parameter
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