Page 275 - Microsensors, MEMS and Smart Devices - Gardner Varadhan and Awadelkarim
P. 275

MECHANICAL  SENSORS     255

   Table 8.8  Some mechanical  properties of bulk  materials used to make micromechanical  sensors
  Material  Property    Si  (SC)  Si  (poly)  SiO 2  Si 3N 4  SiC  Diamond  Al  PMMA
  Young's  modulus  (GPa)  190 a  160   73    385  440    1035    70     -
  Yield  strength  (GPa)  6.9     6      8.4   14   10     53     0.05  0.11
  Poisson's ratio         0.23    0.23   0.20  0.27  -      -     0.35   -
  Fracture  toughness     0.74    —      —    4-5    3     30     30    0.9-1
          2
    (MN/m )
  Knoop hardness          0.8            0.8   3.5          7.0
           2
       9
    (10 kg/m )
  "For  [111] Miller index  (168  GPa  for  [110],  130 GPa  for  [100]). Shear modulus 58  GPa  for  [111], 62  GPa  for
  [110],  and 79  GPa  for  [100]
     Clearly, the microstructures can then be fabricated from  single-crystal  silicon,  polycrys-
  talline silicon, and also from  metals and other types of material.  The processes  shown  also
  demonstrate  that  the residual  strain  is  negligible  because  the  cantilevers  and  diaphragms
  shown  are  neither  curling  nor  buckling  when  free  from  any  external  load.
     Table  8.8  summarises  the  mechanical  properties  of  some  of  the  materials  that  have
  been  used to make  micromechanical  structures and are important in their  practical  design
  and usage. Other important  physical  properties  of these  materials,  such as density,  thermal
  conductivity, and heat capacity, may be found  in the Appendices  F (metals), G  (semicon-
  ductors),  and  H  (ceramics  and  polymers).
     As  stated  in  Table  8.8,  the  question  that must  be  asked  is  whether a  material  behaves
  on  the  micron  scale  in  the  same  way  as  it  does  on  the  macro  scale?  The  answer to  this
  important  question  is  'yes'  for pure  single-crystal  silicon. In this  case, there  are very few
  defects  and  so structures on the micron  scale  have the  same fundamental properties  as on
  the  large  scale.  In  fact,  the  same  rule  also  applies  for  polycrystalline  materials  provided
  the  average  grain  size  is much  smaller  than  the  smallest  dimension  of the  microstructure.
  As the typical grain size in low-pressure chemical  vapour deposition  (LPCVD) polysilicon
  is  50  to  80  nm,  the  material  will  behave  elastically  down  to  about  the  micron  level.  The
  same  rule  can  be  applied  to  other  polycrystalline  materials,  such  as  metals.
     Accordingly,  we  can  apply  classical  geometric  scaling  rules  to  structures  down  to  a
  few  microns  in  size  without  a  breakdown  in  the  laws.  For  example,  a  reduction  in  the
  size of a cantilever structure will increase  its resonant frequency  by a factor K  but reduce
              3
  its  mass  by  K ,  deflection by  K,  spring constant  by  K,  and so on.
     Finally,  we must consider  the types  of transducer  for a microstructure  that  convert  its
  deflection  into  an  electrical  quantity.  There  are  a  number of  different  ways  in  which  the
  movement  could be  detected  such  as

  •  Capacitive  (electrostatic) pickup

  •  Resistive  (conductive)  pickup
  •  Inductive  (amperometric) pickup

  The  two  most  commonly  used  forms  of  transduction  are  capacitive  and  resistive.
  Figure  8.25  shows  a microflexure  in which its  end  is capacitively  coupled  to a stationary
  sense  electrode.
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