Page 313 - Microsensors, MEMS and Smart Devices - Gardner Varadhan and Awadelkarim
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BIO(CHEMICAL)  SENSORS   293





































  Figure  8.60  A  silicon  micromachined  catalytic  gate  MOSFET  gas  sensor:  (a)  Schematic  cross
  section  of a device  with a silicon plug, (b) photograph  of an array of four polymer-coated n -channel
  MOSFET  devices  on  a  1800  um  square  diaphragm  with  a  900 um  (10  um  thick)  silicon  plug  to
  equilibrate  temperature,  and  (c) response  of  iridium  (8 nm)  FET  at  140 °C.  From  Briand  et  al.
  (2000)

  This  allowed  catalytic  gate  materials  (e.g.  platinum,  palladium,  and  iridium)  to  be  used
  to  sense  gases  such  as  ammonia,  ethanol,  hydrogen  sulfide,  and  so  on.  The  devices  are
  typically operated  at temperatures around  180 °C to increase the activity of the catalyst and
  rate kinetics. The most recent  MOSFET  devices  use silicon  micromachining  techniques  to
  define  a  silicon  microplatform  and  thermal plug (Briand et al.  2000).  Figure  8.60 shows
  a  schematic  cross  section  of  the  device  and  a  photograph  of  the  FET  device  showing
  a  set  of  four  FET  sensors  with  an  integrated  heater  and  temperature  sensor.  A  shift  in
  threshold  voltage  of  about  220  mW  is  observed  for  a  20-ppm  pulse  of  ammonia  in  air.
  The  power  consumption  of  the  device  is  greatly  reduced  to  about  100 mW  at  200 °C,
  and  again  commercial  arrays  of these  devices  are being produced  by a Swedish  company
  (Nordic  Sensors)  for  gas  and  odour detection.
    There  has  also  been  some  research  effort  toward  the  use  of  polymeric  materials  as
  the  gate  material  to  detect  organic  vapours  at  room  temperature.  A  similar  principle
  has  been  developed  by  Janata  (1992)  using suspended  gate  structures to  detect  the  shift
  in  work  function  of  nonconducting  polymers.  But  more  recently,  the  metal  gate  is  no
  longer  suspended,  like  the  catalytic FET device,  and is  made  of a thin porous conducting
  polymer  film  (Hatfield  et al.  2000).  Figure  8.61  shows the  structure (a) and  layout (b) of
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