Page 309 - Microsensors, MEMS and Smart Devices - Gardner Varadhan and Awadelkarim
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BIO(CHEMICAL)  SENSORS  289




















  Figure  8.56  Photographs of two examples of silicon resistive gas sensors: (a) array of three micro-
  diaphragms,  each  1100 jim x  3500 um and about 0.6  um thick  with  two  sets of  sensing electrodes
  per  cell  and  (b)  single microdiaphragm  of  1500 um  square  with  a drop of  doped  tin  oxide  located
  on  top  of  a single  set  of  sensing  electrodes  and  a single 750  um square  microheater. Both  devices
  are mounted  on  a  DIL  header  with 0.1" spacing

  three  mechanisms is given by

                                               2
                                                        4
                                                             4
                         (T  -  To) + b conv (T -  T 0)  + c rad (T  -  T 0 )  (8.55)
  with a,  b and c being constants. The actual contributions from  each of these three mecha-
  nisms has been determined by running a device (SRL108) in a vacuum, and Figure  8.57(b)
  shows  that  the  results  are  a  good  fit  to  the  terms  in  Equation (8.51)  (Pike  and Gardner
  1997).
    It  can  be  seen  that  devices  operated  at  about  350 °C  lose  most  of  their  heat through
  convection  to  air  and  a  negligible  amount  in  radiation.  In  this  case,  the  DC  power
  consumption  of  the  microhotplate  is  typically  120 mW  at  300 °C  or  60  mW  per  resis-
  tive  sensor.  The  thermal  response  time  of  the  microhotplate  was  measured  to  be  2.8 ms
  for  a  300 °C change  in  operating  temperature  (Pike  and  Gardner  1997).  Both  the power
  consumption of the  device  and its  thermal time constant will scale down with the  size of
  the  diaphragm;  hence,  power  consumptions and  time  constants of  less  than  10 mW  and
  1  ms,  respectively,  are  quite  realizable.
    Figure  8.58  shows  the  characteristic  response  of  an  undoped  and  a  doped  tin  oxide
  resistive  gas  microsensor  operated  at  a constant temperature  of  367 °C to ppm  pulses  of
  NO2  in  air  at  38%  relative  humidity (RH).  The  doped  devices  clearly  show  a  higher
  response  to NO 2  and it should be noted  that the resistance here  increases  in the  presence
  of  the oxidising  gas. The resistance falls  in the presence  of reducing gases  such as CO or
  hydrogen.  The  rise  time  of a tin  oxide  sensor  tends to be  faster than  its  decay  time; this
  becomes  more  apparent when detecting  larger  molecules  such as ethanol. The response  is
  also  not  well  approximated  by  a  first-order  process;  therefore,  an  accurate  model  of  the
  dynamic response  requires  a multiexponential  model  (Llobet  1998).
    However, the fast thermal response  time of the microhotplate  permits the rapid modula-
  tion of its operating temperature -  this can be used to reduce the average power consump-
  tion  of  the  device  by  a  factor  of  approximately  10 when powering  up  for  only  100 ms
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