Page 307 - Microsensors, MEMS and Smart Devices - Gardner Varadhan and Awadelkarim
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BIO(CHEMICAL)  SENSORS   287





















































       Figure  8.55  Example of  the  steps required to fabricate  a resistive gas microsensor


      5.  The next step involved the deposition  of the gold  (Au) thin film and patterning with
        Mask  3  to  define  the  sensing  electrode  structure.  A  lift-off  technique  was  again
        used;  therefore,  a  10 nm titanium  (Ti)  adhesion  layer  followed  by  300  nm  Au film
        was sputtered over  the patterned  photoresist.  The photoresist  was then removed with
        acetone  to leave the  electrodes  on the  surface.
      6.  To create  the  ultrathin  membrane  structure  required  an  anisotropic  KOH  back-etch
        through the SCS. Most photoresists  are inappropriate  for defining features any deeper
        than  20  urn  in  KOH  etch  conditions;  therefore,  the  SiN x  and  SiO 2  on  the  wafer
        underside  were  patterned  with  Mask  4  using  plasma  etching  to  form  a  suitable
        KOH mask.
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