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96    Cha pte r  T h ree


          3.3  Strain and Pressure Sensors
               The effect of strain on the mechanical and electronic properties of
               organic semiconductors is an emerging research topic in fundamen-
               tal physics and applications. Although mechanical flexibility is one of
               the main advantages of organic materials, relatively little progress
               has been made in the field of pressure or bending recognition mainly
               because mechanical sensing requires attributes of conformability and
               flexibility and three-dimensional large-area shaping that in many
               cases are difficult to achieve even for organic devices.
                   On the other hand, in the application domain, artificial sense of
               touch is considered an essential feature of future generations of
               robots, and wearable electronics has become one of the hottest themes
               in electronics, aiming at the design and production of a new genera-
               tion of garments with distributed sensors and electronic functions.
               3.3.1  State of the Art in Strain and Pressure Sensors
                       Based on Organic Materials
               The first example of a large-area pressure network fabricated on a
               plastic sheet by means of integration of organic transistors and rubbery
                                                                      7
               pressure-sensitive elements was reported by Someya and Sakurai  in
               2003. The device structure is shown in Fig. 3.1.
                   To fabricate the organic transistor, at first glass resin was spin-
               coated and cured on a 50 μm thick polyimide film with an 8 μm thick
               copper film which acts as the gate electrode. Then a pentacene semicon-
               ductor layer of nominal thickness of 30 nm was vacuum-sublimed on
               these films at ambient substrate temperature. Finally, source and
               drain gold electrodes were deposited by means of vacuum evapora-
               tion through shadow masks. On the other hand, pressure sensors are
               made by using pressure-sensitive conductive rubbery sheets sand-
               wiched between two 100 μm wide metal lines that cross at a right
               angle. One of the metal lines is connected to an organic transistor while
               the other line is connected to the ground. The pressure-sensitive sheet
               is 0.5 mm thick silicone rubber containing graphite. In this chapter



                                       Source
                         Drain                 Pressure
                               Plastic sheet                  V ss
                   V dd

                                                    Pressure-sensitive rubber
                     Gate             Organic semiconductor
                                 Polyimide
               FIGURE 3.1  Schematic of the device structure reported in Ref. 7. (Reprinted
               with permission from Ref. 7. Copyright 2003, IEEE.)
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