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Integrated Pyr oelectric Sensors     147

               the substrate. Of course, all substrate-related considerations are only
               important in the low-frequency range, when the penetration depth of
               the thermal wave is sufficiently high to reach down to the substrate.
               The penetration depth is defined as the distance in which the tempera-
               ture has fallen to 1/e  of its maximum value. In the high-frequency
               range (above 1 kHz), the penetration depth is shorter than the thick-
               ness of the pyroelectric layer. Since it is the average of the tempera-
               ture lift  T  in the pyroelectric layer that is important,  T decreases
               with a faster excitation, due to a shorter penetration depth λ at higher
               frequencies according to λ = 2K/ ω with  K being the thermal
               diffusivity.
                   The blue line in all diagrams of Fig. 4.17 corresponds to a calcula-
               tion without any substrate, hence it does not change from one substrate
               to another. The frequency where the influence of the substrates is start-
               ing to become visible is around 10 kHz, and this frequency is the same
               for all substrates. But the extent to which the temperature lift is low-
               ered by the substrate depends on its heat conductivity. The highest
               response is hence obtained for the PET foil (Melinex), having a heat
               conductivity in the range of the P(VDFTrFE) layer. Silicon is the worst
               substrate in the interesting frequency range between 0.1 and 100 Hz
               with respect to the magnitude of the voltage and current response
               because of its high thermal conductivity. With increasing thickness of
               the substrate the lowering of the temperature lift is extended to smaller
               frequencies. In Fig. 4.18a to c the different current and voltage responses
               are plotted. It is shown that they strongly depend on the substrate
               thickness in the low-frequency range. Again the detailed characteris-
               tics of these curves are determined and explained by the temperature
               lifts calculated and displayed in Fig. 4.17.

               Comparison of Different Pyroelectric Layer Thicknesses  The thickness of
               the pyroelectric layer has an influence on the response functions of
               the sensor as well (see Fig. 4.19a to c). At low frequencies, when due
               to the large penetration depth the whole sample is excited, the pyro-
               electric current is equal for all thicknesses of the pyroelectric layer. At
               higher frequencies the pyroelectric layer is activated only partly,
               resulting in a lower average temperature in the pyroelectric layer. It is
               interesting that for the high thermally conductive silicon substrate, the
               thin pyroelectric layer does not give the highest response, because the
               heat is conducted away by the substrate. However, for each layer
               thickness on the silicon substrate, there is a frequency range where
               the current response is maximized.

               Influence of Impedance and Capacitance of the Measurement Circuit  As
               expected from Eq. (4.31) the voltage response is strongly influenced
               by the input resistance of the measurement instrument or, strictly
               speaking, by the cutoff frequency  ω  (see Sec. 4.2.4), whereas the
                                               c
               current response is independent of ω  and only determined by the
                                                c
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