Page 247 - Photonics Essentials an introduction with experiments
P. 247

Measurements in Photonics

                                                Measurements in Photonics  241

            Take some time to experiment with the curve tracer, using a resis-
          tor instead of your device. When you turn on the tracer, note that the
          current scale is 2 A and the voltage scale is 2 V per division. These
          values are very large. You should adjust the curve tracer to the appro-
          priate scales for both current and voltage before applying any voltage
          to the device to be tested. Typical values of voltage are –5 V to +2 V.
          Typical values of current are 10  A to 100 mA in forward bias, and
          only 10  A in reverse bias. Be aware at all times which lead is the an-
          ode and which lead is the cathode of your diodes. In forward bias, the
          anode is biased positive with respect to the cathode.


          10.11  Summary
          Basic optoelectronic device characterization is easy to learn but it
          takes skill and patience to make high-precision measurements. You
          will be able to note your own progress in setting up experiments and
          obtaining measurements as you use this book. Although experience is
          a great teacher, you can often learn even more by reading the owner’s
          manual of your instruments carefully. There you will often find en-
          lightening details of the principles of operation and suggested experi-
          mental set-up schematic diagrams.
            A critical detail in most experiments is mounting the sample so that
          it can be characterized. The most important concern is stabilizing the
          device so that it does not move during the measurement. The time you
          spend initially to mount a device socket so that it can be attached to a
          x-y-z manipulator will pay back big dividends in the validity of your
          measurements and also in reduced mechanical strain on the device
          electrical leads.


          Bibliography
          R. F. Pierret,  Semiconductor Device Fundamentals,  Reading, Addison-Wes-
             ley, 1996. This book is rich in techniques and set-ups for experimental
             characterization of electronic devices.
          J. Wilson and J. Hawkes, Optoelectronics, 3rd Edition, London, Prentice-Hall
             Europe, 1998.
          E. Hecht, Optics, 2nd edition, Reading, Addison-Wesley, 1987.
          Also see the User’s Manual of each instrument.












       Downloaded from Digital Engineering Library @ McGraw-Hill (www.digitalengineeringlibrary.com)
                   Copyright © 2004 The McGraw-Hill Companies. All rights reserved.
                    Any use is subject to the Terms of Use as given at the website.
   242   243   244   245   246   247   248   249   250   251   252