Page 86 - Power Electronics Handbook
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Trigger devices   79































                                                       ov
                                                               (e)
                    Firprr 3.4 Complementary and programmable unijunction transistors: (a) complementary
                    unijuaction transistor (CVJT); (b) CUJTsymbol; (c) programmable unijunction transistor
                    (PUT); (d) PUT symbol; (e) a PUT oscillator circuit


                    mode, the device exhibits a negative resistance characteristic, similar to
                    that of Figure 3.3(e). Since the applied voltages and currents are of polarity
                    opposite  to  that  of  the  conventional  UJT this  device  is  called  a
                    complementary UJT.
                      The intrinsic stand-off ratio of  the CUJT is determined by the ratio of
                    the two resistors R1 and R2 and since these are situated on the same silicon
                    die as the rest of  the components the device can be designed to exhibit a
                    tight tolerance in this parameter, good stability over a wide temperature
                    range, and low saturation voltage.
                      The programmable unijunction transistor is also a four-layer device but
                    it has its resistors R1 and R2 external to the silicon die so that they can be
                    selected by the user. This enables parameters such as the intrinsic stand-off
                    ratio, interbase resistance and the peak and valley point currents, to be
                    programmable. By  choice of  suitable external components these para-
                    meters can  be made  less  susceptible to temperature variations  than  a
                    conventional  UJT. As seen from its symbol, the PUT is basically a thyristor
                    with an anode gate.
                      Figure 3.4(e) shows the PUT used in a relaxation oscillator circuit similar
                    to that of Figure 3.3(f). External resistors  R1 and R2 determine the value of
                    the intrinsic stand-off ratio for the device and timing circuit R5C1 can be
                    modified to vary the oscillator frequency. Diode D1 compensates for the
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