Page 87 - Power Electronics Handbook
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80   Power semiconductor control components
                      temperature variation in V,,  given by equation (3.1), and so enables this
                      circuit to maintain much greater frequency stability than conventional UJT
                      systems.

                       3.3.3 The diac
                       Two construction techniques exist for a diac, as shown by their symbols of
                       Figure 3.5. The three-layer device is made as a gateless transistor having a
                      p-n-p  or n-p-n  arrangement, the base  being relatively thick  and  the
                       emitter  and  collectors being  symmetrically  placed.  This  gives  the
                       component a  low  gain  if  operated  as a  transistor,  but  a  symmetrical
                       breakover voltage when run as a trigger device. Irrespective of the polarity
                       of the applied voltage, one junction is always forward biased and the other
                       reverse biased. At low voltage levels very little current  will flow, but when
                      the voltage reaches a critical value the reverse current will reach such a
                      value that enough carriers  are injected from the forward-biased junction to
                      flood the reverse-biased junction with minority carriers, and to turn it on.
                      The device will remain on, turning off when the current falls to a low value
                      again.
















                                                                  (b)  I

                           3.5 Diac symboh (a) three-layer device; (b) five-layer device


                        The three-layer diac has a typical breakdown voltage of about 30 V with
                      a breakback voltage of about 8 V and canying a current of  1 A for a short
                      duration. Much better characteristics, such as a lower breakback voltage,
                      can be obtained by using a five-layer structure, which essentially consists of
                      a triac, as shown in Figure 1.27(b), in which the gate has been omitted.
                        The characteristics of  a diac are as shown in Figure 1.27(c) for the case
                      where the gate current is zero. Being bidirectional devices, diacs are very
                      useful for firing triacs, and often the two components are built in the same
                      silicon die, the diac being formed in the gate of the triac. The device is now
                      referred to as a quadrac. Figure 3.6 shows a full-wave phase-control system
                      which has found extensive use for domestic applications such as heater
                      controls,  light  dimmers and  motor  speed  variation.  It  is  perhaps  the
                      simplest of circuits, containing three components, the triac and diac being
                      available as a single unit.
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