Page 32 - Semiconductor For Micro- and Nanotechnology An Introduction For Engineers
P. 32
Observed Lattice Property Data
Table 2.1. Lattice properties of the most important microsystem base materials a .
Thermal Gallium Process Arsenide Si 3 N 4 Oxide SiO 2 GaAs -Quartz α Ga: 69.72 Si: 28.0855 Si: 28.0855 28.0855 Si: As: 74.9216 N: 14.0067 O: 15.994 O: 15.994 Zinc-blende Amorphous Trigonal Amorphous Cubic symmetry symmetry 5320 3100 2650 < 2200 Pure: 320 97 – Y: 87 Y: 75 72 – Y: : 118.1 C 11 -
. 174
LPCVD Poly-Si 28.0855 Si: Poly- crystalline 2330 Y: 130 – S: 69
Crystalline Silicon Si 28.0855 Si: Carbon-like, Cubic symmetry 2330 Pure: : 166 C 11 : 63.9 C 12 : 79.6 C 44 p-Type: : 80.5 C 11 : 115 C 12 : 52.8 C 44 n-Type: : 97.1 C 11 : 54.8 C 12 : 172 C 44
) m 3 kg ⁄
Property Atomic Weight Crystal class/ Symmetry Density ( Elastic moduli ) (Gpa Y: Young modulus B: Bi-axial modulus S: Shear modulus : Tensor C i coefficients.
Semiconductors for Micro and Nanosystem Technology 31
