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The Crystal Lattice System
          Table 2.1. Lattice properties of the most important microsystem base materials a .
                 Thermal  Gallium   Process   Arsenide   Si 3 N 4 Oxide SiO 2 GaAs -Quartz  α  -  -  8.2  18  14.4 –  Amorphous Amorphous  5.65  4.9127  X i  5.4046  C  -  -  1902  1705  0.31  0.26  0.169   - 0.22  0.17  350  750  740  740  )   (12  46  18  1.4   - 1.5  1.1  6  –  6  –  6  – XY cut 14.3  6.86×10  2.7×10   -   0.4×10  Z cut 7.



                  LPCVD  Poly-Si  12.5  10.5 –  ,   5.43  polycrystal  .  1412  0.3  0.2 –  702.24  150  6  –  2.33×10 a. The tabulated values for amorphous process materials are foundry-dependent and are provided only as an indica- tion of typical values. Also, many of the measurements on crystalline materials are for doped samples and  henc




               Crystalline   Silicon  Si  :   100〉  ;  13  5.1 –  : 11.7  111〉  5.43  1412  : 0.28  100〉  : 0.36  111〉  702.24  150  6  –  2.33×10




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                    Property  Hardness (Gpa  Lattice parameter  () X, C: axes  Melting point (°C  Poisson ratio ν  Specific heat  kgK  ⁄  J   (  C p  Thermal   conductivity   )  WmK  ⁄  (  Thermal expansion   coefficient  1  )   (T –  α






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