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The Crystal Lattice System










               Gallium   Arsenide   GaAs  -  5.65  -  0.31  350  )   (12  46  6  –  6.86×10






                 Process   Si 3 N 4  -  Amorphous  1902  0.26  750  18  6  –  2.7×10




          Table 2.1. Lattice properties of the most important microsystem base materials a .
                    -Quartz      4.9127  5.4046                XY cut 14.3  Z cut 7.8


                    α  8.2       X i  C  -  0.169  740  1.4

                 Thermal   Oxide SiO 2  18  14.4 –  Amorphous  1705   - 0.22  0.17  740   - 1.5  1.1  6  –   -   0.4×10  6  –  0.55×10







                  LPCVD  Poly-Si  12.5  10.5 –  ,   5.43  polycrystal  .  1412  0.3  0.2 –  702.24  150  6  –  2.33×10 a. The tabulated values for amorphous process materials are foundry-dependent and are provided only as an indica- tion of typical values. Also, many of the measurements on crystalline materials are for doped samples and  henc



               Crystalline   Silicon  Si  :   100〉  ;  13  5.1 –  : 11.7  111〉  5.43  1412  : 0.28  100〉  : 0.36  111〉  702.24  150  6  –  2.33×10




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                                       )  〈  〈
                       )                  ˜
                    Property  Hardness (Gpa  Lattice parameter  () X, C: axes  Melting point (°C  Poisson ratio ν  Specific heat  kgK  ⁄  J   (  C p  Thermal   conductivity   )  WmK  ⁄  (  Thermal expansion   coefficient  1  )   (T –  α






         32           Semiconductors for Micro and Nanosystem Technology
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