Page 56 - Semiconductor For Micro- and Nanotechnology An Introduction For Engineers
P. 56

Elastic Properties: The Stressed Uniform Lattice
                                                          – [
                                                D 1 –(
                                                            (
                                                           β r –
                                         E r() =
                                                      exp
                                                                 eq
                                                  e
                                                                  and the equilibrium bond
                             The potential energy for bond formation  D r )]) 2   (2.10)
                                                                e
                             length  r   depend on the constituent atoms, and may be obtained by
                                    eq
                                                    β
                             experiment. The parameter   controls the width of the potential well,
                             i.e., the range of the interparticle forces. For covalent crystals, such as sil-
                             icon, this picture is too simplistic. The tetrahedral structure of the orbitals
                             forms bonds that can also take up twisting moments, so that, in addition
                             to atom pair interactions, also triplet and perhaps even larger sets of inter-
                             acting atoms should be considered. A three-atom interaction model that
                             accounts well for most thermodynamic quantities of Si appears to be the
                                                                      i
                             Stillinger-Weber potential [2.8], which, for atom   and the interaction
                             with its nearest neighbors  ,  ,   and m   is
                                                  j kl
                                                  1
                                    ,,
                                         ,
                                           ,
                              E Si-Si ( r r r r r ) =  --- E r() +[  2  ij  E r ) +  E r() +  E r )]
                                                                            (
                                                             (
                                             m
                                                                      il
                                                                           2
                                                                              im
                                                             2
                                                               ik
                                                                    2
                                           l
                                    i
                                      j
                                        k
                                                  2
                                                    (
                                  +  E r ,(  r ,  θ ) +  E r ,  r ,  θ  ) +  E r ,  r ,  θ  )  (2.11)
                                                                   (
                                     3  ij  ik  jik  3  im  ik  mik  3  il  im  lim
                                                           ,
                                                     (
                                                                   (
                                   +  E r ,(  r ,  θ  ) +  E r ,  r θ ) +  E r ,  r ,  θ )
                                      3  ij  im  jim  3  ij  il  jil  3  il  ik  lik
                             In this model, the two-atom interaction is modelled as
                                                     E r()
                                                      2  ij
                                                                 –
                                                                 1
                                  EGHe – p  –  r ⁄  a  – q )exp  ( (  r ⁄  a –  c) )  r ⁄  a <  c  (2.12)
                                    (
                              =             ij          ij              ij
                                                 0     r ⁄  a >  c
                                                         ij
                             and the three-atom interaction by
                                                 E r ,  r ,  θ )
                                                   (
                                                     ij
                                                        ik
                                                           jik
                                                   3
                                            r     – 1   r     – 1
                                   Eλexp  γ     ----- –  c   +    ------ –  c    ,  r ⁄  a <  c
                                                         ik
                                              ij
                                                                         ij
                                              a      a    
                                                                                 (2.13)
                                =                     1  2
                                           ×   cos  θ (  jik ) +  ---
                                                        3 
                                  
                                                                       otherwise
                                                 0
                             Semiconductors for Micro and Nanosystem Technology      53
   51   52   53   54   55   56   57   58   59   60   61