Page 530 - The Mechatronics Handbook
P. 530

0066_frame_C19  Page 152  Wednesday, January 9, 2002  5:32 PM









                       toys, automotive safety and control, and industrial control. However, in order to realize the advantages
                       of integrated sensors, a number of technical barriers must be overcome. Two important barriers are (1)
                       high R&D costs of integrated sensors and (2) reliable and robust packaging of sensors.
                         The development of microintegrated sensors involves high development costs and long time-to-
                       market. The surface micromachined accelerometer developed by analog devices costs tens of millions of
                       dollars and took more than 5 years to produce. Why do integrated sensors cost so much to build? Sensors
                       are developed using a group-up approach. The development cycle of a sensor begins at the level of physical
                       principles. The cost of sensor development includes expertise for material selection, design generation,
                       prototype process development, and characterization.
                         Such a development cost and speed is not tolerable in applications where only a small amount of
                       custom sensors is required. Standard sensing modules, low-cost, flexible foundry fabrication processes,
                       and advanced computer simulation and prototyping tools are required to advance the state-of-the-art
                       of microintegrated sensors.
                         Future sensors will involve more non-silicon materials. For example, polymer materials can be used
                       to reduce the costs while high-temperature materials maybe used for high-temperature sensing applica-
                       tions (e.g., monitoring of conditions in engines).
                       Conclusions

                       A brief historical overview of the development of microfabrication technology and microintegrated
                       sensors is presented. Common sensing principles, including capacitive, piezoresistive, and piezoelectric
                       sensing, are discussed. Four important case studies of sensors are undertaken. For each type of sensor
                       applications—pressure sensors, acceleration sensors, tactile sensors, and flow sensors—the sensor archi-
                       tectures and fabrication processes are reviewed. Interested readers may find more in-depth information
                       in the references provided in this section.

                       References

                        1. Nathanson, H.C., Newell, W.E., Wickstrom, R.A., and Davis J.R. Jr., “The resonant gate transistor,”
                          IEEE Transactions on Electron Devices, Vol. ED-14, No. 3, pp. 117–113, March 1967.
                        2. Petersen, K.E., “Silicon as a mechanical material,” Proceedings of the IEEE, Vol. 70, No. 5, pp. 420–457,
                          May 1982.
                        3. Angell, J.B., Terry, S.C., and Barth, P.W., “Silicon micromechanical devices,” Scientific American, Vol.,
                          248, pp. 44–55, April 1983.
                        4. Siewell, G.L., Boucher, W.R., and McClelland, P.H., “The ThinkJet orifice plate: a part with many
                          functions,” Hewlett-Packard Journal, May 1985, pp. 33–37.
                        5. Allen, R.R., Meyer, J.D., and Knight, W.R., “Thermodynamics and hydrodynamics of thermal ink
                          jets,” Hewlett-Packard Journal, May 1985, pp. 21–27.
                        6. Williams, K.R., and Muller, R.S., “Etch rates for micromachining processing,” Journal of Microelec-
                          tromechanical Systems, Vol. 5, No. 4, pp. 256–268, December 1996.
                        7. Kovacs, G.T.A., Micromachined transducers sourcebook, McGraw-Hill, 1998.
                        8. Trimmer, W.S., Micromechanics and MEMS––Classis and seminal papers to 1990, IEEE Press, 1997.
                        9. WWW site http://mems.isi.edu.
                       10 Yun, W., Howe, R.T., and Gray, P.R., “Surface micromachined, digitally force-balanced accelerometer
                          with integrated CMOS detection circuitry,” Technical Digest, IEEE Solid-State Sensor and Actuator
                          Workshop, pp. 21–25, Hilton Head, SC, June 1992.
                       11. Jiang, F., Tai, Y.C., Ho, C.M., Karan, R., and Garstenauer, M., “Theoretical and experimental studies
                          of micromachined hot-wire anemometers,” Technical Digest, International Electron Devices Meeting
                          1994, San Francisco, CA, pp. 139–142, December 1994.
                       12. Ebefors, T., Kalvesten, E., and Stemme, G., “Three dimensional silicon triple-hot-wire anomometer
                          based on polyimide joints,” Proceedings of the 11th International Workshop on MEMS, pp. 93–98,
                          January 1998.


                       ©2002 CRC Press LLC
   525   526   527   528   529   530   531   532   533   534   535