Page 173 - Complete Wireless Design
P. 173

Amplifier Design



            172  Chapter Three

                        As this ratio decreases, the ß variations stabilize—but the gain of the ampli-
                        fier will decrease. An R /R ratio of 10 or less will usually give a very stable
                                              B  E
                        ß design.
                          Class A amplifiers with either inductor or LC resonant tank collector loads
                        (Fig. 3.76) are able to have a lower V  and less power losses than circuits
                                                            CC
                        employing a resistive load at the collector. This is because the DC voltage drop
                        across the collector load (the inductor) is at a very low value—equal to its DC
                        resistance. Since the inductor or inductor/capacitor combination “forces” the
                        average voltage to be approximately V  at the transistor’s collector—instead
                                                            CC
                        of half the V  when a collector resistor is used—the RF will swing 1V  above
                                    CC                                                   CC
                        this average V  value present at the collector down to approximately 0 V. This
                                     CC
                        effectively doubles the voltage at the output of the transistor.
                          In designing small signal amplifiers, the collector current does not neces-
                        sarily have to be at the middle of the transistor’s I  , as it will be amplify-
                                                                       C(MAX)
                        ing only low signal levels. The I can be chosen to be in the most linear part of
                                                     C
                        its characteristic curve, and at a low enough amplitude that DC power dissi-
                        pation is at a minimum; but not so low that any RF signal will be too near cut-
                        off, or at excess distortion levels, or where the stage gain will suffer. However,
                        most I values, as well as V  values, will be chosen to conform to the S-param-
                              C                  CE
                        eter files available for ease of design and simulation.
                          It must be kept in mind that after calculating the matching network for an
                        amplifier with the existing S parameters, we must also calculate the bias com-
                        ponents with the very same V   and I that were used to originally measure
                                                    CE      C
                        these S parameters, and as are shown in the *.S2P file, or the active device’s
                        impedances will not be correct, since Z /Z  varies with changes in I and V .
                                                           IN  OUT                     C      CE



























                        Figure 3.76 Class A transistor amplifiers with (a) inductor load and
                        (b) tank load.


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