Page 723 - Corrosion Engineering Principles and Practice
P. 723

676    C h a p t e r   1 5                                                                                                H i g h - Te m p e r a t u r e   C o r r o s i o n    677


                      15.3.1  Scale as a Diffusion Barrier
                      Once a corrosion product layer is formed, the corrosion process may
                      continue through the diffusion of at least one of the reactants through
                      the corrosion product layer. Let us consider, for example, the case of
                      nickel exposed to air at high temperature. Corrosion can theoretically
                      continue  through  the  nickel  oxide  layer  by  means  of  diffusion  in
                      either direction, alone or by counter-current diffusion, as illustrated
                      in Fig. 15.9.
                         From the atomic viewpoint, diffusion through the oxide occurs
                      by  atomic  movement  which  is  made  easier  by  existing  atomic
                      vacancies, as illustrated in Fig. 15.10 and 15.11. The schematic diagram
                      in Fig. 15.10 represents the type of oxide that forms on nickel and on
                      a number of other metals, including copper, cobalt, manganese, and
                      chromium. In the case of nickel, only the NiO oxide will form in the
                      presence of oxygen, but, as the figure shows, it is a metal-deficit or
                      p-type*  oxide;  that  is,  a  slight  excess  of  oxygen  atoms  over  nickel
                      atoms will be found under normal conditions, and the charge balance
                      in the scale that must remain electrically neutral will be maintained
                      by a few of the nickel atoms assuming a higher valence state.
                         For  this  type  of  oxide,  the  controlling  step  in  increasing  scale
                      thickness is the ability of the nickel ions to migrate outward toward
                      the  surface.  If  a  small  quantity  of  a  higher  valence  ion  (Cr ,  for
                                                                           3+
                      example) is added to the nickel, as in Fig. 15.11, charge balance will
                      require  a  greater  number  of  nickel  vacancies  and  hence  an  easier,


                                           1
                                                    2+
                                         Ni + /  O     Ni  + O 2–  NiO
                                             2
                                               2
                                                               N 2
                                                                     O 2
                                                              O 2
                                                  NiO             N 2
                                                metal oxide          O 2
                                 Ni metal
                                                              N 2
                                          Metal ions and electrons  O 2  N 2
                                                                     O 2
                                                   Oxygen ions
                                                               O 2  N 2  Air


                      FIGURE 15.9  Schematic diagram showing countercurrent diffusion, that
                      is, diffusion of oxygen inward and metal ions plus electrons outward.
                      Thus, the anode is at the metal/ metal oxide interface where oxidation
                      (M → M  + 2e ) occurs. The cathode is at the oxide/air interface where
                            2+
                                 −
                                         2−
                      reduction (½O + 2e  → O ) occurs.
                                     −
                                 2
                      * A p-type material is a semiconductor material in which the conduction is mostly
                       assumed by holes having the equivalent of positive charges.
   718   719   720   721   722   723   724   725   726   727   728