Page 226 - Electrical Properties of Materials
P. 226
208 Principles of semiconductor devices
(a) Epitaxially grown
n-type
p-Type substrate
(b) Ultraviolet light
Mask
Photoresist
n SiO 2
Epitaxial layer
p
Photoresist
(c)
SiO
n 2
Epitaxial layer
p
Photoresist
(d) SiO
n 2
Epitaxial layer
p
SiO 2
(e)
n
Epitaxial layer
p
SiO 2
(f)
n p + n p + n Epitaxial layer
p-Type substrate
p
(g)
n p + n p + n
p
(h) n +
n p + n p + n
p
p
E B C
(i) metal
Fig. 9.53 n p + n p + n
Stages in the production of + p
microelectronic circuits. n p
