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Building in the third dimension                     213

              consisting of an opaque array of bars interspersed with transparent regions.
              The shadow of a bar will be made fuzzy by diffraction. Now, if altern-
              ate ‘windows’ are ‘glazed’ with a half-wavelength phase shifter, the light
              through adjacent windows is out of phase, so the light diffracting around the
              bar will interfere destructively, reducing the fuzziness and making the bar’s
              shadow sharp, as if it were a larger object, away from the diffraction limit.
            • High-k gate dielectrics. This is the jargon used. For some reason semicon-
              ductor technologists denote the relative dielectric constant by k, instead of
              the ε r that is used by practically everybody else. The problem is with the
              insulator between the metal electrode and the channel in a MOSFET. As a
              result of scaling down all the dimensions, this insulating layer went down
              to 1.2 nm, containing just five atoms. That led to some leakage current by
              tunnelling when the transistor was off. Leakage current means more heat
              and shorter battery life. Thus something had to be done when the next scal-
              ing down, to 45 nm, was considered. A thicker insulator was needed but
              without an increase of the voltage drop across it. The solution was to replace
              silica (ε r = 4.1) by an insulator which had a higher dielectric constant. The  ∗  It follows from the continuity of D,
                                                                      ∗
              two insulators considered by the various companies were hafnium dioxide,  the electric flux density, that the electric
                                                                             field is lower in a material with a higher
              with a dielectric constant around 20, and zirconium dioxide, with a slightly
                                                                             dielectric constant.
              higher dielectric constant of 25. It turned out that for technological reasons
                                                             †
              it was also necessary to return to a metal gate electrode. The metal used  †  In fact, metal electrodes were replaced
              was molybdenum, a high-melting-point material.                 by polysilicon ones in the late 1960s
            • Extreme ultraviolet (known also as soft X-ray) lithography. The shorter the  but the acronym MOSFET, referring to
                                                                             ‘metal–oxide–semiconductor’, survived.
              wavelength, the higher is the resolution. On that basis, all we need is to find
                                                                             Concerning the principles, it made no
              some sources at the right wavelength. If we want a minimum feature size of  difference so there was no reason to
              13 nm (some optimists believe that that is possible) then we need sources at  mention this in Section 9.22. Lately,
              about the same wavelength. As it happens, there are methods to create such  however, polysilicon has been aban-
                                                                             doned and metals have regained their
              radiation. The favourite scheme is to have a powerful pulsed laser, direct it  rightful place.
              on a piece of metal that has lots of electrons (tin, molybdenum, and silver
              have been favourite candidates), and turn the metal into a plasma, which will
              convert the incident radiation with reasonable efficiency (a figure of a few
              per cent has been quoted) into the desired extreme UV wavelength. This is
              not easy to do, but if one succeeds, that is only the beginning of the prob-
              lems. At this wavelength there are no lenses and mirrors of the kind that
              exist at longer wavelengths. Mirrors have been produced from multilayers
              (see Section 10.5) but they are very lossy. In fact all materials are lossy at
              these wavelengths. So no proper projecting optics exist, nor are there ap-
              propriate masks or photoresists. Efforts are of course being made in this
              direction and one day they may succeed, but it is difficult to see when.



            9.25 Building in the third dimension
            All the microelectronic circuits we have been talking about were built in two
            dimensions; that’s why the technique is often called the planar technique. It is  ‡  Flatland: A romance of many dimen-
            invariably a plane surface that is manipulated for producing a host of devices.  sions is a short novel by Edwin Abbot,
                          ‡
            It is like Flatland, a world of two dimensions. Can we get out of Flatland and  published in London in 1884. It is about
                                                                             life that is lived in two dimensions and
            start building circuits in the third dimension? A start has already been made. It  how the inhabitants can deduce evidence
            is believed that the present arrangement of the source, drain, and gate (in spite  about the existence of a third dimension.
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