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EXTERNAL ANALOG SIGNAL                     MICROPROCESSOR




                 CPU READS CONVERSION      I                   I                   1
                 CW STARTS NEW CONVERSION   1                  1                   I
                 ADC CONVERSION TIME        7   E   *  ’   I   - I
                 ADC OWPUT REGISTER VALUE   I  WPLEN-2      I  amLEN-1          I  SAMPLEd


                 Figure 11.2
                 ADC  interleaving.


                 memory can catch up with the CPU. You  can see this in Figure  11.1, where  the
                 access to AA14 is longer than the preceding bus cycles.
                   A form of interleaving is performed in many microprocessor designs when inter-
                 facing to slower peripherals. Figure 11.2 shows a microprocessor connected to an
                 analog-to-digital converter  (ADC)  . When  the  microprocessor wants  to  read  the
                 ADC, it could start the AD conversion, then wait until the conversion is complete.
                 However, this would waste time while the CPU is polling the ADC. Instead, the CPU
                 starts  a  conversion,  then  goes  away  and  does  other  things.  At  some  regular
                 interval,  the  CPU  reads  the  ADC  result  and  starts  the  next  conversion. This
                 technique  can be  applied to  a number  of  different peripheral  types. Two ADCs
                 could be interleaved in the same way  as memory accesses, permitting the conver-
                 sions to overlap.




                 DRAM Burst Mode


                 Many dynamic memories have some form of burst mode of operation that permits
                 faster access. Figure 11.3 shows how burst mode operation compares to the normal
                 mode of operation in a dynamic RAM  (DRAM). In normal operation, each cycle
                 is initiated by -RAS,  followed by -CAS. The access time of the DRAM is the -RAS
                 access time, and the fastest rate the device can be accessed is the random  access
                 cycle time (a parameter you will find on the DRAM data sheet).
                   Figure  11.3 also  shows page  mode,  which  is  the  simplest type  of  DRAM  burst
                 operation. In this case, the -RAS  signal goes low to latch the row address, but it
                 stays low. Subsequent locations are read by  strobing -CAS  to latch a new column
                 address. The -CAS  access time is faster than the -RAS  access time, so subsequent


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