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2 Influence of Deposition Parameters on PVD Coating Properties  415




                  coatings are present some impurities and defects that limit the grains growth. The
                  most common impurity is oxygen, while micro-droplets are the most common
                  defects, particularly in coatings deposited by arc evaporation and by magnetron reac-
                  tive sputtering. The number and size of micro-droplets depend on deposition param-
                  eters like bias voltage [17], substrate temperature [39], argon and nitrogen flow rate
                  [11], and gas pressure [40].
                     The investigations of an influence of negative bias voltage U B on mechanical and
                  structural properties of produced coatings showed a great importance of a deposition
                  method. In case of an arc evaporation method, a decrease of bias voltage to  100 V
                  caused the decrease of grain size in a CrN coating, while in the case of reactive mag-
                  netron sputtering method, a slight increase of grain size was noted [17,24]. Further
                  decrease of bias voltage caused a slight increase of grain size in case of CrN arc-
                  evaporated coating, while in the CrN magnetron-sputtered coating—a significant
                  decrease of a grain size.
                     A decrease of bias voltage caused an increase of lattice parameter [8,25]. In the
                  case of arc evaporation method, the lattice parameter in TiAlN coatings increased
                  from 0.4173 to 0.4231 nm (1.4%) with a decrease of negative bias voltage from
                   40 to  140 V [8], while in the case of CrN x coatings deposited by reactive unbal-
                  anced magnetron sputtering method, the lattice parameter increased from 0.4117 to
                  0.4225 nm (2.6%) with a decrease of negative bias voltage from 0 to  200 V [25].
                  The structure of CrN x coatings changed from open dentritic film grown at low bias
                  voltages to dense structures at higher ones. Moreover, in arc-evaporated coatings,
                  with decreasing negative bias voltage decrease a coating roughness, a size of defects
                  and a defect density [17].
                     Bias voltage has an influence also on mass density [25,27], residual stresses
                  [8,24,27,41,42], adhesion [17,42], and hardness [8,25,29,41,42] of coating. In non-
                  hydrogenated a-C films deposited by DC magnetron sputtering, a decrease of bias
                  voltage caused an increase of mass density up to some saturation level that reached
                  at approximately  100 V [27]. This saturation level depends on argon pressure; with
                  increasing argon pressure the saturation level decreases and, as a consequence, the
                  mass density also decreases.
                     The decrease of bias voltage caused a decrease of intrinsic stresses in
                  magnetron-sputtered coatings (CrN and TiN) [24,41]. Investigations of an influence
                  of bias voltage decrease on intrinsic stresses in arc-evaporated coatings gave two
                  opposite results. According to Ahlgren and Blomqvist [8], in TiAlN coating the
                  intrinsic stresses decreased from  1.7 GPa for U B ¼ 40 V to  5 GPa for
                  U B ¼ 200 V (increased the compressive stress), while according to Grant et al.
                  [42] and Karlsson et al. [43], the decrease of substrate bias voltage caused an
                  increase of intrinsic stresses in CrN coatings (from  6 GPa for U B ¼ 50 V to
                  2 GPa for U B ¼ 200 V) and in TiN and TiC x N 1 x coatings (for TiN coating, stres-
                  ses increase from  6 GPa for U B ¼ 50 V to  1 GPa for U B ¼ 700 V); stresses
                  were changed from compressive to tensile stresses. However, in case of TiC x N 1 x
                  coatings, first intrinsic stresses decreased, but later they increased. The bias voltage
                  at which intrinsic stresses began to increase depending on the carbon content in a
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