Page 172 - Sami Franssila Introduction to Microfabrication
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Thermal Oxidation 151
Lie, L.N. et al: J. Electrochem. Soc., 129 (1982), 2828. Shimidzu, H.: Behavior of metal-induced oxide charge during
Massoud, H.Z. et al: J. Electrochem. Soc., 132 (1985), 2685. thermal oxidation in silicon wafers, J. Electrochem. Soc., 144
Minh, P.N. & T. Ono: Non-uniform silicon oxidation and (1997), 4335.
application for the fabrication of aperture for near-field Suryanarayana, P. et al: Electrical properties of thermal oxides
scanning optical microscopy, Appl. Phys. Lett., 75 (1999), grown over doped polysilicon thin films, J. Vac. Sci. Technol.,
4076. B7 (1989), 599.
Roy, P.K. et al: Synthesis of a new manufacturable high- Vollkopf, A. et al: Technology to reduce the aperture size of
quality graded gate oxide for sub-0.2 µm technologies, IEEE microfabricated silicon dioxide aperture tips, J. Electrochem.
TED, 48 (2001), 2016. Soc., 148 (2001), G587.
