Page 92 - Sami Franssila Introduction to Microfabrication

Epitaxy 71

6S. If pnp-bipolar transistors are made, the buried Herzog, H.-J. et al: SiGe-based FETs: buffer issues and device
layer has to be p-type. Calculate boron updiffusion results, Thin Solid Films, 380 (2000), 36.
for different epitaxy conditions when the buried Meyerson, B.S.: UHV/CVD growth of Si and Si:Ge alloys:
18
layer doping is 10 cm −3 and epilayer doping is chemistry, physics, and device applications, Proc. IEEE ’80
15
−3
10 cm . (October 1992), p. 1592.
Ohmi, T. et al: Formation of device-grade epitaxial silicon
films at extremely low temperatures by low-energy bias
REFERENCES AND RELATED READINGS sputtering, J. Appl. Phys., 66 (1989), 4756.
Theurer, H.: Epitaxial silicon films by the hydrogen reduction
Baliga, J.B.: Epitaxial Silicon Technology, Academic Press, of SiCl 4 , J. Electrochem. Soc., 108 (1961), 649.
1986. Wu, Y.H. et al: The effect of native oxide on epitaxial SiGe
Crippa, D., D.R. Rode & M. Masi: Silicon epitaxy, Semicon- from deposited amorphous Ge on Si, Appl. Phys. Lett., 74
ductors and Semimetals, Vol. 72, Academic Press, 2001. (1999), 528.