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24                                                 Materials and Fabrication Techniques

          Table 2.5  Comparison of Commonly Used Silicon Anisotropic Etchants
          Etchant    Etches Aluminum  Etches Oxide  Silicon Surface  Advantages  Disadvantages
          KOH        Yes            Yes         Very good    Easy to use and  Etches aluminum
                                                             dispose of     and oxide
          EDP        Yes (but some  No          Good         Does not etch  Hazardous,
                     formulations do                         oxide          difficult to use, not
                     not etch aluminum)                                     clean-room
                                                                            compatible
          TMAH       Yes            No          Good         Clean-room and IC Etches aluminum
                                                             process compatible
          TMAH:Si    No             No          Poor         Does not etch  Poor surface finish
                                                             aluminum




                    Etching silicon in these etchants results in three-dimensional structures bounded
                 principally by {111} planes, but also by other planes. The simplest structures are
                 made in {100} silicon. Illustrations showing the anisotropic etch property and the
                 structures that are formed can be seen in Figure 2.11. The intersection between a
                 {111} plane and the {100} surface of the silicon is in a {110} direction. Four such
                 planes intersect the surface, such that the lines of intersection on the silicon surface
                 are at right angles to each other. Each set of planes is inclined at an angle of 54.7 with
                 respect to the surface. Etching is usually done through a window in a masking layer,
                 and if the edge of the window is parallel to the intersection between a set of {111}
                 planes and the surface, then the {111} facet that reaches the surface at this edge is



                               (a)


                               (b)

                               (c)



                               (d)


                                                                  (e)









                                                         (f)
                 Figure 2.11  Illustration of wet anisotropic etching in {100} silicon showing plain views on the
                 left-hand side and cross-sectional views on the right-hand side: (a) square opening in mask with
                 the silicon etched for a relatively short time; (b) square opening in mask with the silicon etched
                 until inverted pyramid forms; (c) rectangular opening in mask with the silicon etched for a
                 relatively short time; (d) rectangular opening in mask with the silicon etched until V-groove is
                 formed; (e) sequence showing undercutting to form a cantilever beam in the masking material;
                 and (f) etching through arbitrarily shaped opening in mask.
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