Page 108 - Microsensors, MEMS and Smart Devices - Gardner Varadhan and Awadelkarim
P. 108

MONOLITHIC  PROCESSING     89

















   Figure 4.23  Hybrid-  model  of an n-p-n transistor used  to define  the basic  small-signal  charac-
   teristics  of  the  device

   and  the  transistor  is  switched  OFF  (i.e.  open),  with  the  output  current  being  close  to
   zero.  In  these  two  regions,  the  transistor  can  be  used  as  a  binary  switch  for  a  digital
   mode of operation.  The reverse-bias  region (V BE <  0,  V BC >  0) has the emitter-base junc-
   tion  reverse-biased  and  the  collector-base junction  forward-biased  and  is  defined  by  the
   parameters  a R  and  B R;  however, this region  is  not  used  often.
     Finally, it is worth noting that there are a number of low-frequency  models of transistors
   used to characterise their behaviour.  Treating the transistor  as a nonlinear  two-port  device,
   the  hybrid-  model  is  often  used.  Figure 4.23  gives  the  hybrid-  model  for  the  CE
   configuration  of the n-p-n  transistor with  an alternating current (AC) voltage  v in  applied.
   In this case, the h parameters  define the important characteristics  of the transistor operating
   in  the forward-active region (at the quiescent point), namely, the input impedance h ie,  the
   current  gain  h fe,  the output conductance  h oe,  and voltage gain  h ie.
     These parameters 8  are defined as follows:


                      BE                ,  _                'BE
                                       5  "oe  —    h re=               (4.22)
                                     Q

   The  small-signal  quantity  h fe  is  very  similar  to  B F,  where



                                                                        (4.23)


   Typical values of the h -parameters  for a transistor  with the ideal  values  shown in  brackets
   are  as  follows:  h ie  ~  500  (high),  h fe  ~  100 (high),  h oe  ~  2 uS (low),  h re  ~  0 (low).
   Higher  input impedance  and  higher  gain  are  realizable  either  in  an  MOS  device  or  by
   the  combination  of  several  transistors  in  a  circuit  to  give  better  characteristics  and  to
   be  ideally  linear -  as  in  the  operational  amplifier. The  important  question  to  be  asked
   here  is  how  the  integration  of  the  sensor  or  actuator  in  a pre-  or  postprocess  affects  the
   characteristic parameters  of the transistor  and hence  the circuit  performance.

   !
    Symbols  in lower case denote  AC  and  subscripts  relate  to input,  forward-active  region, output,  and reverse.
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