Page 191 - Microsensors, MEMS and Smart Devices - Gardner Varadhan and Awadelkarim
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ADHESION  PROBLEMS IN  SURFACE MICROMACHINING     171

      Unreleased
      polysilicon     Holes  Silicon dioxide  Silicon dioxide  Polymer columns
      microstractureV  S_  t                        \



        (a)
      Photoresist  Oxide undercut







       _  ,         Aluminum                Free
       Parylene      /    \                 polysilicon \Oxygen plasma column removal
                                            microstructure^



         (c)                                   (f)

     Figure  6.26  Polymer  supports are added  to  the structure  before  the release etch  in order  to  avoid
     structural  failure  upon  plasma  release  etch


            Table 6.1  Comparison  between  bulk  and  surface  micromachining  technologies
               Bulk  micromachining                 Surface  micromachining
     Advantages         Disadvantages      Advantages         Disadvantages
     Well  established                     Uses  several  materials  Relatively  new  (since
       (since  1960)                         and allows for  new  1980)
                                             applications
     Rugged  structures  Large die areas  that  Small  die area that  Less-rugged
       that can  withstand  give  it high  cost  makes  it cheaper  structures  with
       vibration  and  shock                                    respect  to  vibration
                                                                and  shock
     Large mass/area    Not  fully  integrated  Fits  well  within 1C  Small  mass/area,
       (suitable  for     with  1C processes  process           which would
       accelerometers and                                       typically  reduce
       capacitive  sensors)                                     sensitivity
     Well-characterised  Limited  structural  Wider range of  Some  of the  materials
       material  (i.e.  Si)  geometry  possible  structural  geometry  are not  very well
                                                                understood


     2.  Gradually  replacing  acetone  with photoresist  and  then  spinning  and  ashing  the  resist
        (Hirano et al.  1991).

     3.  Using  an  integrated  polymer  support  structure during release  etching  and  then  ashing
        in oxygen  plasma (Mastrangelo and Saloka  1993). This process is schematically  shown
       in  Figure  6.26(a)  through  to 6.26(f).
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