Page 379 - Book Hosokawa Nanoparticle Technology Handbook
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6.4 ELECTRIC PROPERTIES                                                      FUNDAMENTALS

                                  C        C
                          R 0       1       2      CPE
                                   R 1     R 2     R 3
                      Subscript  Resistance R(Ω)  Capacitance C(F)
                        0       1.51×10 2        ⎯
                        1       1.11×10 2     1.02×10 −10
                        2       4.65×10 3      2.3×10 −5
                                                 -4
                        3       6.41×10 14  3.34×10 (CPE−T)
                                                 -1
                                            5.02×10 (CPE−P)
                      2,500

                      2,000
                     (Ω)  1,500
                                        200
                                        150
                      1,000            (Ω)
                     Ζ″                 100
                                        50
                       500               0
                                       Ζ″
                                        -50
                                         150 200 250 300 350 400
                         0                  Ζ′     (Ω)
                           0    500   1,000  1,500  2,000  2,500
                                       Ζ′     (Ω)

                  Figure 6.4.11
                  Equivalent circuit and impedance plot for WO ·2H O
                                                       2
                                                   3
                  (5.5 vol%) epoxy resin composite [4]. Circles and solid
                  lines indicate measured values and calculated values,
                  respectively. CPE: constant phase element.
                                                                 Figure 6.4.12
                    The mapping of conduction regions in lead titanate  Simulated impedance plot (a) and modulus plot (b) for an
                  zirconate (PZT) thin films on a Si/Pt substrate has  equivalent circuit with largely different component
                  been reported, in which electrical conduction was  resistances R and the same component capacitance C.   is
                  measured in the vertical direction of the films by  the time constant. The modulus is represented as the
                  attaching and scanning a conductive cantilever [8].   inverse of the complex permittivity.
                  A conductive area of approximately 100 nm width
                  was distributed along grain boundaries. The results
                  showed that the grain boundaries work as current
                  paths, degrading the insulating/ferroelectric proper-
                  ties of the PZT thin films.
                    Two microscopic four-point probe methods of
                  examining the electrical conductivity of silicon
                  crystal surfaces, have been developed (Fig. 6.4.13)
                  [9]. One uses linearly arranged monolithic four-point
                  probes fabricated on one tip, whose probe spacing is
                  fixed around several micrometers. The other one uses
                  four probes on four independently driven STM tips,
                  whose probe spacing can be changed from 1  m to
                  1 mm. In the latter method, a square arrangement of
                  the probes is possible [10]; thus, this method can be
                  regarded as a modified, infinitesimal Van der Pauw
                  method. When the probe spacing is very small, only  Figure 6.4.13
                  current flowing near the surface is detected.  Schematic drawings of the four-point probe method in
                  Accordingly, the method can accurately determine  (a) linear and (b) square arrangements.

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