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Organic Semiconductor Lasers as Integrated Light Sources for Optical Sensors   287



                          Pump
                                                Microfluidic
                          diode                  channel







                         Organic              Organic
                         lasers              photodiode
               FIGURE 7.20  Scheme of a possible lab-on-a-chip design incorporating a
               microfl uidic system for analyte preparation and handling, multiple laser
               sources, and photodetection. (See also color insert.)

               these systems complex and expensive. In the concept discussed here, sev-
               eral organic lasers with different emission wavelengths will be integrated
               on a single chip.
                   This system is based on the polymer PMMA which is well suited
               for hot embossing nanostructures. Additionally PMMA is a low-cost
               biocompatible material.   Also it is quite simple to define stripe
                                    79
               waveguides in PMMA.
               PMMA-Based Waveguides
               UV-Induced Refractive Index Modification  Polymers are promising
               materials for the manufacturing of integrated optical elements, due
               to their low cost and excellent processing capabilities. Fabrication of
               polymer waveguides has been demonstrated using different
               approaches, such as reactive ion etching, 80, 81  photolocking, 82, 83  direct
               laser or ion beam writing,  as well as by replication techniques. 85, 86  A
                                     84
               further way is the modification of the dielectric properties of methac-
               rylate polymers by UV radiation, which will be discussed here.
                   Methacrylate polymers such as PMMA exhibit a significant
               change in the refractive index after exposure to ion radiation 87, 88  or UV
                                                                    89
               light of a short wavelength (often referred to as deep UV, DUV).   This
               change of the dielectric properties of the material due to radiation
               was described by Tomlinson et al.  in 1970. The mechanism of the
                                             82
               chemical reaction leading to this change depends on the type of radi-
               ation and the absorbed energy. Figure 7.21 illustrates the dominating
                                          90
               reaction for deep UV radiation.  UV light with an energy of approx.
               5 eV (wavelength of approx. 250 nm) leads to an excitation of the car-
               bonyl group within the ester side chain. This can lead to a cleavage of
               the chemical bond. The dominating process induced by the radiation is
               the cleavage of the side chain, which can degrade into smaller, volatile
               fragments, such as CH , CH OH, CO , and CO. 91–93  The remaining
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