Page 338 - Organic Electronics in Sensors and Biotechnology
P. 338
Organic Electronics in Memories and Sensing Applications 315
g
10 –6 V = 10 V V drain = 15 V 40
I drain (μA) 10 –7
5 V
10 –6 2 V V Gate (V)
0 V 20
10 –8
0 250 500
I drain (μA) 10 –7 Time (s) 0 V gate (V)
V drain = 15 V
10 –8
Memory window –20
after 1000 s
10 –9
0 200 400 600 800 1000
Time (s)
(a)
10 –6
V = 15 V
“Writing” drain
10
10 –7
I drain (A) 10 –8 “On” 0 V gate (V)
“Off”
“Erased”
10 –9
–10
10 –10
0 50 100 150 200
Time (s)
(b)
FIGURE 8.10 Transient response characteristics of BiOFETs (a) indicating a long
retention time (inset: transient decay characteristics of BiOFET with different gate
bias conditions) and (b) as a memory element with an applied gate voltage pulse
showing memory off, on, write, and erase. Note: Gate voltage pulse height is shown
in right-hand scale of each graph. (Reproduced with permission from Ref. 53.
Copyright 2007, Elsevier.)
