Page 133 - Rashid, Power Electronics Handbook
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120                                                                                          S. Yuvarajan

               MCT. The addition of even a small capacitor improves the  8.5.2 Overcurrent Protection
               SOA considerably.
                                                                    The anode-to-cathode voltage in an MCT increases with its
                                                                    anode current and this property can be used to develop a
                                                                    protection scheme against overcurrent [5, 6]. The gate pulses
                                                                    to the MCT are blocked when the anode current and hence the
               8.4 Gate Drive for MCTs                              anode-to-cathode voltage exceeds a preset value. A Schmitt
                                                                    trigger comparator is used to allow gate pulses to the MCT
               The MCT has a MOS gate similar to a power MOSFET or an  when it is in the process of turning on, during which time the
               IGBT and hence it is easy to control. In a PMCT, the gate  anode voltage is relatively large and decreasing.
               voltage must be applied with respect to its anode. A negative
               voltage below the threshold of the On-FET must be applied to
               turn on the MCT. The gate voltage should fall within the
               speci®ed steady-state limits in order to give a reasonably low  8.5.2.1 Snubbers
               delay time and to avoid any gate damage due to overvoltage  As with any other power device, the MCT is to be protected
               [3]. Similar to a GTO, the gate voltage rise-time has to be  against switching-induced transient voltage and current spikes
               limited to avoid hot spots (current crowding) in the MCT  by using suitable snubbers. The snubbers modify the voltage
               cells. A gate voltage less than ÿ5 V for turn-off and greater  and current transients during switching such that the switch-
               than 10 V for turn-on ensures proper operation of the  ing trajectory is con®ned within the safe operating area (SOA).
               MCT. The latching of the MCT requires that the gate  When the MCT is operated at high frequencies, the snubber
               voltage be held at a positive level in order to keep the MCT  increases the switching loss due to the delayed voltage and
               turned off.                                          current responses. The power circuit of an MCT chopper
                 Because the peak-to-peak voltage levels required for  including an improved snubber circuit is shown in Fig. 8.4 [5,
               driving the MCT exceeds those of other gate-controlled  7]. The turn-on snubber consists of L and D LS  and the turn-
                                                                                                   s
               devices, the use of commercial drivers is limited. The MCT  off snubber consists of R , C , and D . The series-connected
                                                                                                   Cs
                                                                                         s
                                                                                            s
               can be turned on and off using a push-pull pair with discrete  turn-on snubber reduces the rate of change of the anode
               NMOS–PMOS devices, which, in turn, are driven by com-  current di =dt. The MCT does not support V until the
                                                                             A
                                                                                                             s
               mercial integrated circuits (ICs). However, some drivers  current through the freewheeling diode reaches zero at turn-
               developed by MCT manufacturers are not commercially  on. The turn-off snubber helps to reduce the peak power and
               available [3].                                       the total power dissipated by the MCT by reducing the voltage
                 A Baker's clamp push-pull can also be used to generate gate  across the MCT when the anode current decays to zero. The
               pulses of negative and positive polarity of adjustable width for  analysis and design of the snubber and the effect of the
               driving the MCT [5–7]. The Baker's clamp ensures that the  snubber on switching loss and electromagnetic interference
               push-pull transistors will be in the quasi-saturated state prior  are given in References [5] and [7]. An alternative snubber
               to turn-off and this results in a fast switching action. Also, the  con®guration for the two MCTs in an ac-ac converter has also
               negative feedback built into the circuit ensures satisfactory  been reported [8]. This snubber uses only one capacitor and
               operation against variations in load and temperature. A  one inductor for both the MCT switches (PMCT and NMCT)
               similar circuit with a push-pull transistor pair in parallel  in a power-converter leg.
               with a pair of power BJTs is available [8]. An intermediate
               section, with a BJT that is either cut off or saturated, provides
               ÿ10 and þ15 V through potential division.                                    DLs      Df


                                                                                            Ls
                                                                                                   R-L Load
                                                                                                                    _
               8.5 Protection of MCTs
                                                                                 Rs       Dcs
               8.5.1 Paralleling of MCTs                                                                            Vs

               Similar to power MOSFETs, MCTs can be operated in parallel.  Gate
               Several MCTs can be paralleled to form larger modules with               Cs
               only slight derating of the individual devices provided the                                          +
               devices are matched for proper current sharing. In particular,
               the forward voltage drops of individual devices have to be
               matched closely.                                      FIGURE 8.4  An MCT chopper with turn-on and turn-off snubbers.
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