Page 137 - Rashid, Power Electronics Handbook

124 S. Yuvarajan

The MCTs are also used in ac-resonant-link converters with Gate to Anode Voltage (Peak), V GAM 20 V
pulse density modulation (PDM) [19]. The advantages of the Rate of Change of Voltage ðV GA ¼ 15 VÞ,
PDM converter, such as zero-voltage switching, combined dv=dt 10 kV/ms
with those of the MCT make the PDM converter a suitable Rate of Change of Current, di=dt 80 kA/ms
candidate for many ac-ac converter applications. In an ac-ac
PDM converter, a low-frequency ac voltage is obtained by Peak Off-State Blocking Current ðI DRM Þ

switching the high- frequency ac link at zero-crossing voltages. ðV KA ¼ÿ600 V V GA ¼þ15 V; Tc ¼þ25 CÞ 200 mA
Two MCTs with reverse-connected diodes form a bidirectional On State Voltage ðV TM Þ

switch that is used in the circuit. A single capacitor was used ðI ¼ 100 A; V GA ¼ÿ10 V Tc ¼þ25 CÞ 1.3 V
K
as a simple snubber for both MCTs in the bidirectional
switch.

References
8.12 Conclusions 1. V. A. K. Temple, ‘‘MOS-Controlled Thyristors Ð A new class of
power devices,'' IEEE Trans. on Electron Devices 33: 1609–1618
(1986).
The MCT is a power switch with a MOS gate for turn-on and
2. T. M. Jahns et al., ‘‘Circuit utilization characteristics of MOS-
turn-off. It is derived from a thyristor by adding the features of
Controlled Thyristors,'' IEEE Trans. on Industry Applications 27:3,
a MOSFET. It has several advantages compared to modern
589–597 (May=June 1991).
devices such as the power MOSFET and the IGBT. In parti- 3. Harris Semiconductor, MCT=IGBTs=Diodes Databook, 1995.
cular, the MCT has a low forward drop and a higher current 4. P. Holdman and F. Lotuka, ‘‘SMPS IGBTs Ð High switching frequen-
density, which are required for high-power applications. The cies allow ef®cient switchers,'' PCIM Power Electronics Systems 25:2,
characteristics of Generation-2 MCTs are better than those of 38–42 (February 1999).
Generation-1 MCTs. The switching performance of Genera- 5. D. Quek, Design of Protection and Control Strategies for Low-loss
tion-2 MCTs is comparable to that of the IGBTs. However, MCT Power Converters, Ph.D. Thesis, North Dakota State University,
with the development of high-speed IGBTs, it is yet to be July 1994.
seen which of the two devices will be dominant. Silicon 6. D. Quek and S. Yuvarajan, ‘‘A novel gate drive for the MCT
Power Corporation is developing both PMCTs and NMCTs. incorporating overcurrent protection,'' Proc. of IEEE IAS Annual
Meeting 1994, pp. 1297–1302.
A hybrid version of the MOS turn-off thyristor (MTOT)
7. S. Yuvarajan, R. Nelson, and D. Quek, ‘‘A study of the effects of
also is available. The data on MTOT and some preliminary
snubber on switching loss and EMI in an MCT converter,'' Proc. of
data on PMCTs and NMCTs are available on the
IEEE IAS Annual Meeting 1994, pp. 1344–1349.
Internet. 8. T. C. Lee, M. E. Elbuluk, and D. S. Zinger, ‘‘Characterization and
snubbing of a bidirectional MCT switch in a resonant ac link
converter,'' IEEE Trans. Industry Applications 31:5, 978–985
Acknowledgment (Sept.=Oct. 1995).
9. S. Yuvarajan and D. Quek, ‘‘A PSPICE model for the MOS Controlled
The author is grateful to Ms. Jing He and Mr. Rahul Patil for Thyristor,'' IEEE Trans. on Industrial Electronics 42:5, 554–558 (Oct.
their assistance in collecting the reference material for this 1995).
chapter. 10. G. L. Arsov and L. P. Panovski, ‘‘An improved PSPICE model for the
MOS-Controlled Thyristor,'' IEEE Trans. Industrial Electronics 46:2,
473–477 (April 1999).
11. P. D. Kendle, V. A. K. Temple, and S.D. Arthur, ‘‘Switching com-
parison of Generation-1 and Generation-2 P-MCTs and ultrafast
8.13 Appendix N-IGBTs,'' Proc. of IEEE IAS Annual Meeting 1993, pp. 1286–
1292.
The following is a summary of the speci®cations on a 600 V/ 12. E. Yang, V. Temple, and S. Arthur, ‘‘Switching loss of Gen-1 and Gen-
150 A PMCT made by Silicon Power Corporation: 2 P-MCTs in soft-switching circuits,'' Proc. of IEEE APEC 1995, pp.
746–754.
ÿ600 V
Peak Off State Voltage, V DRM
13. Q. Huang et al., ‘‘Analysis of n-channel MOS-Controlled Thyristors,''
þ40 V
Peak Reverse Voltage, V RRM
IEEE Trans. Electron Devices 38:7, 1612–1618 (1991).
Continuous Cathode Current, 14. B. Jayant Baliga, Power Semiconductor Devices, PWS Publishing Co.,

(T ¼þ90 CÞ; I K90 150 A Boston, 1996.
Non-Repetitive Peak Cathode Current, I KSM 5000 A 15. R. Rodrigues, A. Huang, and R. De Doncker, ‘‘MTO Thyristor Power
Peak Controllable Current, I KC 300 A Switches,'' Proc. of PCIM'97 Power Electronics Conference, pp. 4-1–4-
Gate to Anode Voltage (Continuous), V GA 15 V 12.