Page 139 - Rashid, Power Electronics Handbook

9

Static Induction Devices

Bogdan M. Wilamowski, Ph.D. Summary ................................................................................................... 127
College of Engineering, 9.1 Introduction ...................................................................................... 127
University of Idaho, Boise,
ID 83712 USA 9.2 Theory of Static Induction Devices........................................................ 128
9.3 Characteristics of Static Induction Transistor .......................................... 130
9.4 Bipolar Mode Operation of SI Devices (BSIT) ........................................ 130
9.5 Emitters for Static Induction Devices..................................................... 131
9.6 Static Induction Diode (SID) ............................................................... 131
9.7 Lateral Punch-Through Transistor (LPTT).............................................. 132
9.8 Static Induction Transistor Logic (SITL) ................................................ 132
9.9 BJT Saturation Protected by SIT ........................................................... 133
9.10 Static Induction MOS Transistor (SIMOS) ............................................. 133
9.11 Space-Charge Limiting Load (SCLL)...................................................... 134
9.12 Power MOS Transistors ....................................................................... 134
9.13 Static Induction Thyristor.................................................................... 135
9.14 Gate Turn-Off Thyristor (GTO)............................................................ 136
References.......................................................................................... 136

Summary power of 100 kW at 100 kHz or 10 W at 10 GHz. Static
induction transistor logic had switching energy 100 smaller
Several devices from the static induction family including 2
than its I L competitor [8, 9]. The static induction thyristor
static induction transistors (SIT), static induction diodes
has many advantages over the traditional SCR, and the static
(SID), static induction thyristors, lateral punch-through tran-
induction diode exhibits high switching speed, large reverse
sistors (LPTT), static induction transistor logic (SITL), static
voltage, and low forward voltage drops.
induction MOS transistors (SIMOS), and space charge limit-
ing load (SCLL) are described. The theory of operation of
static induction devices is given for both a current controlled
by a potential barrier and a current controlled by space
charge. The new concept of a punch-through emitter 9.2 Theory of Static Induction Devices
(PTE), which operates with majority carrier transport, is
presented. The cross section of the static induction transistor is shown in
Fig. 9.1, while its characteristics are shown in Fig. 9.2. An
induced electrostatically potential barrier controls the current
in static induction devices. The derivations of formulas will be
9.1 Introduction done for an n-channel device, but the obtained results with a
little modi®cation also can be applied to p-channel devices.
Static induction devices were invented by Nishizawa [28]. The For a small electrical ®eld existing in the vicinity of the
idea was so innovative that the establishment in the solid-state potential barrier, the drift and diffusion current can be
electronics community at the time had dif®culty understand- approximated by
ing and accepting this discovery. Japan was the only country
where static induction family devices were successfully fabri-
cated [14]. The number of devices in this family continues to J ¼ÿqnðxÞm djðxÞ þ qD dnðxÞ ð9:1Þ
grow with time. Static induction transistors can operate with a n n dx n dx

127
Copyright # 2001 by Academic Press.
All rights of reproduction in any form reserved.