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ION IMPLANTATION AND RAPID THERMAL PROCESSING

ION IMPLANTATION AND RAPID THERMAL PROCESSING 10.15

10.5 RESOURCES IN ION IMPLANTATION

Leading-edge developments and trends in ion implantation equipment and process development are
given a biannual forum at the International Conference on Ion Implantation Technology (IIT) whose
proceedings are published by IEEE (many of the references in this chapter are taken from previous
IIT conferences). As part of that conference, a School of Ion Implantation is held immediately pre-
ceding, and has developed a textbook of ion implantation fundamentals that is without equal. 5

REFERENCES

1. Freeman, J., “A New Ion Source for Electromagnetic Isotope Separators,” Nucl. Instr. Meth., 22 (1963),
p. 306.
2. White, N., “Ion Sources for Use in Ion Implantation,” Nucl. Instr. Meth. Phys. Res., B37/38 (1989), p. 78.
3. Horsky, T. N., “Indirectly Heated Cathode Arch Discharge Source for Ion Implantation of Semiconductors,”
Rev. Sci. Instrum., 69, 2, (1998), pp. 840–842.
4. Horsky, T. N., “Current Status of the Extended Life Source: Lifetime Performance and Improvements,” IEEE
Proceedings of the 12th International Conference on Ion Implantation Technology, 1998, pp. 416–419.
5. Glawischnig, H., et al., “Modern Implanter Concepts,” Chap. 10 in J. F. Ziegler, ed., Ion Implantation Science
and Technology, Yorktown, NY: Ion Implantation Technology, 2000.
6. Agarwal, A., “Ultra-shallow Junction Formation Using Conventional Ion Implantation and Rapid Thermal
Annealing,” IEEE Proceedings of the 13th International Conference on Ion Implantation Technology,
Piscataway, NJ, 2000, pp. 293–299.
7. Graf, M., et al., “Low Energy Ion Beam Transport,” IEEE Proceedings of the 14th International Conference
on Ion Implantation Technology, Piscataway, NJ, 2002, pp. 359–363.
8. Angel, G., et al., “Enhanced Low Energy Drift-mode Beam Currents in a High Current Ion Implanter,”
IEEE Proceedings of the 12th International Conference on Ion Implantation Technology, Piscataway, NJ,
1998, pp. 219–222.
9. Angel, G., et al., “A Novel Beam Line for Sub-keV Implants with Reduced Energy Contamination,” IEEE
Proceedings of the 12th International Conference on Ion Implantation Technology, Piscataway, NJ, 1998,
pp. 188–191.
10. Tsukihara, M., et al., “Introducing the LEX/LEX3, New Low Energy High Current Implanters,” IEEE
Proceedings of the 14th International Conference on Ion Implantation Technology, Piscataway, NJ, 2002,
pp. 373–376.
11. Al-Bayati, A., et al., “Junction Profiles of Sub-keV Ion Implantation for Deep Sub-quarter Micron Devices,”
IEEE Proceedings of the 13th International Conference on Ion Implantation Technology, Piscataway, NJ,
2000, pp. 87–90.
12. Sugitani, M., et al., “Introducing the NV-GSD-HE3, a New High Energy Implanter,” IEEE Proceedings of
the 12th International Conference on Ion Implantation Technology, Piscataway, NJ, 1998, pp. 192–195.
13. O’Connor, J., et al., “Performance Characteristics of the Genus Inc. Tandetron 1520 Ion Implantation
System,” IEEE Proceedings of the 11th International Conference on Ion Implantation Technology,
Piscataway, NJ, 1996, pp. 17–20.
14. LaFontaine, M., et al., “Beam Optics of the VIIsta 3000 Ion Implanter,” IEEE Proceedings of the 13th
International Conference on Ion Implantation Technology, Piscataway, NJ, 2000, pp. 403–406.
15. Harlan, J., and K. Petry, “Overview of the Eaton 8250 Medium Current Implanter,” IEEE Proceedings of the
12th International Conference on Ion Implant. Technology, Piscataway, NJ, 1998, pp. 266–269.
16. Renau, A., and D. Hacker, “The VIISta 810 300 mm Medium Current Ion Implanter,” IEEE Proceedings of
the 12th International Conference on Ion Implantation. Technology, Piscataway, NJ, 1998, pp. 158–161.
17. Mack, M., and M. Ameen, “Wafer Cooling and Wafer Charging in Ion Implantation” in J. F. Ziegler, ed.,
Ion Implantation Science and Technology, Yorktown, NY: Ion Implantation Technology, 2000, pp. 524–537.

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