Page 143 - Semiconductor Manufacturing Handbook
P. 143

Geng(SMH)_CH10.qxd  04/04/2005  19:46  Page 10.16




                                       ION IMPLANTATION AND RAPID THERMAL PROCESSING

                   10.16  WAFER PROCESSING

                               18. Mezack, G., et al., “Advantages of the Varian Single Wafer High Current Ion Implanter for Advanced Device
                                  Fabrication,”  IEEE Proceedings of the 13th International Conference on Ion Implantation  Technology,
                                  Piscataway, NJ, 2000, pp. 431–434.
                               19. Keenan, W., et al., “Advances in Sheet Resistance Measurements for Ion Implant Monitoring,” Solid State
                                  Technol., 28, 6 (1985), p. 155.
                               20. Gyulai, J., et al., “Radiation Damage and Annealing in Silicon after Ion Implantation,” Chap. 4 in J. F.
                                  Ziegler, ed., Ion Implantation Science and Technology, Yorktown, NY: Ion Implantation Technology, 2000.
                               21. Simonton, R., and L. Rubin, “Channeling Effects in Ion Implantation into Silicon” in J. F. Ziegler, ed., Ion
                                  Implantation Science and Technology, Yorktown, NY: Ion Implantation Technology, 2000, p. 303.
                               22. Campbell, C., et al., “Beam Angle Control on the VIISta 80 Ion Implanter,” IEEE Proceedings of the 14th
                                  International Conference on Ion Implantation Technology, Piscataway, NJ, 2002, pp. 193–196.
                               23. Jones, M., and F. Sinclair, “IEEE Proceedings of the 11th International Conference on Ion Implantation
                                  Technology,” Piscataway, NJ, 1996, pp. 264–267.
                                                                                       +
                                                                                         +
                               24. Rubin, L., et al., “Process Control Issues for Retrograde Well Implants for Narrow n /p Isolation in CMOS,”
                                  IEEE Proceedings of the 14th International Conference on Ion Implantation Technology, Piscataway, NJ,
                                  2002, pp. 17–20.
                               25. Stone, L., et al., “Performance of a New Silicon-coated Disk Material: Disk Manufacture Control & Device
                                  Production Experience,”  IEEE Proceedings of the 12th International Conference on Ion Implantation
                                  Technology, Piscataway, NJ, 1998, pp. 574–577.
                               26. Kawasaki, Y., et al., “The Collapse of Gate Electrode in High Current Implanter of Batch Type,”  IEEE
                                  Proceedings of the 4th International Workshop on Junction Technology, Piscataway, NJ, 2004, pp. 39–41.
                               27. Ryssel, H., et al., “Contamination Control for Ion Implantation,” Chap. 11 in J. F. Ziegler, ed.,  Ion
                                  Implantation Science and Technology, Yorktown, NY: Ion Implantation Technology, 2000.
                               28. Mack, M., and M. Ameen, “Wafer Cooling and Wafer Charging in Ion Implantation” in J. F. Ziegler, ed., Ion
                                  Implantation Science and Technology, Yorktown, NY: Ion Implantation Technology, 2000, pp. 537–563.
                               29. Mack, M., et al., “Optimized Charge Control for High Current Ion Implantation,” IEEE Proceedings of the
                                  12th International Conference on Ion Implantation Technology, Piscataway, NJ, 1998, pp. 486–489.




































                          Downloaded from Digital Engineering Library @ McGraw-Hill (www.digitalengineeringlibrary.com)
                                     Copyright © 2004 The McGraw-Hill Companies. All rights reserved.
                                       Any use is subject to the Terms of Use as given at the website.
   138   139   140   141   142   143   144   145   146   147   148