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WET ETCHING

11.8 WAFER PROCESSING

REFERENCES

1. Knotter, D. M., “Etching Mechanism of Vitreous Silicon Dioxide in HF-Based Solutions,” J. Amer. Chem.
Soc., 122(18), 4345–4351, 2000.
2. Almanza-Workman, A. M., S. Raghavan, and R. P. Sperline, “In Situ ATR-FTIR Analysis of Surfactant
Adsorption onto Silicon from Buffered Hydrofluoric Acid Solutions,” Langmuir, 16, 3636–3640, 2000.
3. Zhang, P., et al., “Fundamental Studies of Surfactant Interactions with Silicon Surface Using ATR-FTIR
Technique,” at SEMACH Cleaning Workshop, 2003.
4. Iwai, H., et al., “Advanced Gate Dielectric Materials for Sub-100 nm CMOS,” 2002 IEDM Conf., IEDM
Digest, 625–628, 2002.
5. Christenson, K., et al., “Selective Wet Etching of High-κ Dielectrics,” 2002 UCPSS Conference.
6. Watanabe, D., et al., “Selective Wet Etching for High-κ Material by Organic Solvent Containing
Hydrofluoric Acid,” 2003 Semiconductor Pure Water and Chemicals Conference, p. 117.
7. Pearton, S. J., “Wet and Dry Etching of Compound Semiconductors,” In Handbook of Compound
Semiconductors—Growth, Processing and Devices, Hollaway, P. H., McGuire, G. E. (eds.) William Andrew
Publishing, Park Ridge, NJ, 1995.
8. Ashby, C. I. H., “Etching of GaAs in Properties of GaAs,” 2d ed., EMIS Data Review Series, INSPEC,
London, 1990.
9. Adachi, S., “Properties of InP,” EMIS Data Review 6, INSPEC, London, 1990.
10. Kovacs, G. T. A., Maluf, N. I., and Petersen, K. E., “Bulk Micromachining of Silicon,” Proc. IEEE, 86,
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