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                                          Source: SEMICONDUCTOR MANUFACTURING HANDBOOK


                                  CHAPTER 13

                                  PHYSICAL VAPOR DEPOSITION




                                  Florian Solzbacher
                                  University of Utah
                                  Salt Lake City, Utah













                      13.1 INTRODUCTION TO PHYSICAL VAPOR DEPOSITION

                                  Physical vapor deposition (PVD) is a high-vacuum deposition process for metals, metal alloys, or
                                  other solid chemical compounds using thermal energy (evaporation) or kinetic energy of ions (sput-
                                  tering) to remove material from a source (sputter target or crucible) and deposit it onto a substrate.


                      13.1.1 Motivation and Key Properties
                                  PVD is the most commonly used process for the deposition of metals and metal oxides in semicon-
                                  ductor processing. The motivation for using PVD processes lies in the specific properties of the
                                  process and the deposited layers:

                                  • A wide range of layer thicknesses ranging from tens of nanometers to tens of micrometers is pos-
                                   sible.
                                  • The layer uniformity and reproducibility is high.
                                  • Essentially, there is no limitation in the choice of source materials (such as metals, semiconduc-
                                   tors, glass, ceramics, and plastics) that can be deposited.
                                  • Multilayer systems can be deposited in one vacuum process.
                                  • The substrate temperature can be kept low (down to room temperature) and seldom exceeds 350°C
                                   during deposition. Thus, no damage is being done to underlying layers.
                                  • The layer properties (specific resistance, temperature coefficient of resistance (TCR), adhesion,
                                   structure, composition, density, refractive index) can be modified by changing the process para-
                                   meters (substrate temperature, residual gas pressure, process pressure, particle energy, deposition
                                   rate, and gas atmosphere).



                      13.2 FUNDAMENTALS OF PVD PROCESSES

                                  PVD processes are vacuum processes. In order to understand their specifics, it is necessary to briefly
                                  introduce some of the main concepts of vacuum physics like pressure and mean free path. As dis-
                                  cussed in Chap. 7, pressure p can be described as gas molecules with concentration n per unit


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