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ECD FUNDAMENTALS
16.10 WAFER PROCESSING
submicron features. ECD prevents void formation in the deposition process by combining organic
additives and electrolytic deposition parameters to produce high-yielding, reliable interconnects. To
maintain consistent performance, the plating bath is periodically analyzed and replenished with auto-
mated chemical management systems. Semiconductor manufacturers are now researching methods
to further reduce line resistance as features continue to shrink. These include switching to thinner
and more conductive ALD barrier materials. Electromigration lifetimes and dielectric constants may
be further improved with selectively deposited electroless capping layers.
REFERENCES
1. Murarka, S., I. Verner, and R. Gutmann, Copper—Fundamental Mechanisms for Microelectronic
Applications. John Wiley & Sons, New York, 2000.
2. Edelstein, D., et al., “Full Copper Wiring in a Sub-0.25 µm CMOS ULSI Technology,” Proc. IEEE IEDM,
pp. 773–776, 1997.
3. Andricacos, P. C., et al., “Damascene Copper Electroplating for Chip Interconnections,” IBM J. Res.
Develop., Vol. 42, No. 5, pp. 567–574, 1998.
4. Paunovic, M., and M. Schlesinger, Fundamentals of Electrochemical Deposition. John Wiley & Sons, New
York, 126–127, 1998, pp. 55, 91.
5. Lyons, E. H., in F. A. Lowenheim (ed.), Modern Electroplating, 3rd ed. Wiley Interscience, New York, 1974,
p. 7.
6. Weast, E. H. (ed.), CRC Handbook of Chemistry and Physics, 58th ed. CRC Press, West Palm Beach, 1978,
p. F104.
7. Deligianni, H., et al., in P. C. Andricacos, P. C. Searson, C. Reidsema-Simpson, P. Allongue, J. L. Stickney,
and G. M. Oleszek (eds.), Electrochemical Processing in ULSI Fabrication and Semiconductor/Metal
Deposition II, ECS, Pennington, NJ, 1999, pp. 52–60.
8. Takahashi, K., and M. Gross, “Transport Phenomena That Control Electroplated Copper Filling of Submicron
Vias and Trenches,” J. ECS, Vol. 146, No. 12, pp. 4499–4503, 1999.
9. Moffat, T. P., et al., “Superconformal Electrodeposition of Copper,” ECS Electrochem. Solid-State Lett., Vol. 4,
No. 4, pp. C26–C29, 2001.
10. Andricacos, P. C., et al., in P. C. Andricacos, J. O. Dukovic, G. S. Mathad, G. M. Oleszek, H. S. Rathore, and
C. R. Simpson (eds.), Electrochemical Processing in ULSI Fabrication I and Interconnnect and Contact
Metallization: Materials, Processes, and Reliability. ECS, Pennington, NJ, 1999, pp. 48–58.
11. Gross, M. E., et al., “The Role of Additives in Electroplating of Void-Free Cu in Sub-micron Damascene
Features,” AMC 1998, p. 51, 1999.
12. Vereecken, P., et al., “Effect of Differential Additive Concentrations in Damascene Copper Electroplating,”
Meeting Abstracts of the 203rd Meeting of the Electrochemical Society, Abstract, Vol. 606, 2003.
13. Ritzdorf, T., D. Fulton, and L. Chen, “Pattern-Dependent Surface Profile Evolution of Electrochemically
Deposited Copper,” AMC 1999, p. 101, 2000.
14. Andricacos, P. C., et al., “Damascene Copper Electroplating for Chip Interconnections,” IBM J. Res.
Develop., Vol. 42, No. 5, pp. 567–574, 1998.
15. Murmann, R. K., Inorganic Complex Compounds. Reinhold, New York, 1964.
16. Safranek, W. H., in F. A. Lowenheim (ed.), Acid Copper, 4th ed. Wiley Interscience, New York, 1974, pp. 66–71.
17. Frank, A., and A. J. Bard, “The Decomposition of the Sulfonate Additive Sulfopropyl Sulfonate in Acid
Copper Electroplating Chemistries,” J. ECS, Vol. 150, No. 4, pp. C244–C250, 2003.
18. Ritzdorf, T., and D. Fulton, “Electrochemical Deposition Equipment,” in M. Datta, T. Osaka, and J. W.
Schultze (eds.), New Trends in Electrochemical Technology, Microelectronic Packaging, Vol. 3. Francis &
Taylor, London, in press.
19. Jordan, M., in F. A. Lowenheim (ed.), Electrodeposition of Lead and Lead Alloys, 4th ed. Wiley Interscience,
New York, 1974, pp. 380–381.
20. Mentone, P., “Filling Vias With Electroplated Aluminum,” Peaks in Plating, Semitool, 2004.
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