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COPPER, LOW-k DIELECTRICS, AND THEIR RELIABILITY

COPPER, LOW-κ DIELECTRICS, AND THEIR RELIABILITY 4.13

17. Trademark of Dow Chemical.
18. S. P. Jeng et al., “Process integration and manufacturability issues for high performance multilevel intercon-
nect,” Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturability
Symposium, pp. 25–31, 1994.
19. D. Edelstein et al., “Reliability, yield, and performance of a 90 nm SOI/Cu/SiCOH technology,” Proceedings
of the 2004 International Interconnect Technology Conference, pp. 214–216, IEEE, Piscataway, NJ, 2004.
20. A. Loke et al., “Kinetics of copper drift in low-kappa polymer interlevel dielectrics,” IEEE Trans. of Elec.
Dev., Vol. 46, No. 11, pp. 2178–2187, November 1999.
21. A. Grill et al., “SiCOH dielectrics: From low-kappa to ultralow-kappa by PECVD,” Proceedings of Advanced
Metallization Conference 2001, Materials Research Society, pp. 253–259, 2001.
22. L. Clevenger et al., “90 nm SiCOH technology in 300 mm manufacturing,” Advanced Metallization
Conference, Materials Research Society, 2004.
23. H. Rathore et al., “Reliability of Copper Interconnects with CVD Low-κ BEOL Dielectric,” 2004
Proceedings of VLSI Multilevel Interconnection Conference, Institute for Microelectronics Interconnections,
p. 43.
24. J. Lloyd et al., “Relationship between interfacial adhesion and electromigration in Cu metallization,” 2002
IEEE International Integrated Reliability Workshop, pp. 32–35, IEEE, Piscataway, NJ, 2002.
25. C. K. Hu et al., “Electromigration path in Cu thin film lines,” Appl. Phys. Lett., Vol 74, No. 20, pp.
2945–2947, 1999.
26. C. K. Hu et al., “Electromigration in two-level interconnects of Cu and Al alloys,” Mater. Chem. Phys., Vol.
41, No. 1, pp. 1–7, June 1995.
27. C. K. Hu et al., “A study of electromigration lifetime for Cu interconnects coated with CoWP, Ta/TaN,
or SiC N H ,” Proceedings of Advanced Metallization Conference 2003, Materials Research Society,
x y z
pp. 253–257, 2004.
28. I. A. Blech, “Electromigration in thin aluminum films on titanium nitride,” J. Appl. Phys., Vol. 48, pp. 1203–1208,
1976.
29. F. Chen et al., “Measurements of effective thermal conductivity for advanced interconnect structures with var-
ious composite low-κ dielectrics,” International Reliability Physics Symposium Proceedings 2004, pp. 68–73,
IEEE, Piscataway, NJ, 2004.
30. E. T. Ogawa et al., “Stress-induced voiding under vias connected to wide Cu metal leads,” International
Reliability Physics Symposium Proceedings 2002, pp. 312–321, IEEE, Piscataway, NJ, 2002.
31. T. D. Sullivan, “Thermal dependence of voiding in narrow aluminum microelectronic interconnects,” Appl.
Phys. Lett., Vol. 55, p. 2399, 1989.
32. R. G. Filippi et al., “Thermal cycle reliability of stacked via structures with copper metallization and an
organic low-κ dielectric,” International Reliability Physics Symposium Proceedings 2004, pp. 61–67, IEEE,
Piscataway, NJ, 2004.
33. W. Landers et al, “Chip to package interaction for 90 nm Cu/PECVD low-κ technology,” Proceedings of the
2004 International Interconnect Technology Conference, p. 108, IEEE, Piscataway, NJ, 2004.

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